Unlock instant, AI-driven research and patent intelligence for your innovation.

Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell

A diffusion layer and composition technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as degradation and shortage of photovoltaic cells

Inactive Publication Date: 2015-08-12
HITACHI CHEM CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the coating amount of the paste composition was reduced, the amount of aluminum diffused from the surface of the p-type silicon substrate to the inner part was insufficient
As a result, the desired BSF (Back surface Field) effect (where the collection efficiency of the generated carriers is attributed to p + The effect increased by the presence of the type layer), which leads to the problem that the properties of photovoltaic cells are degraded

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] 20g of B with a nearly spherical particle shape, an average particle size of 4.9 μm and a softening point of 561°C 2 o 3 -SiO 2 -R 2 O(R: Na, K, Li)-based glass powder (trade name: TMX-404, manufactured by Tokan Material Technology Co., Ltd.), 0.5 g of ethyl cellulose and 10 g of 2-(2-butoxyl acetate) Ethoxy)ethyl ester was mixed with an automatic mortar kneader and made into a paste to prepare a composition for forming a p-type diffusion layer.

[0085] The particle shape of the glass powder was judged by observation using a scanning electron microscope (trade name: TM-1000, manufactured by Hitachi High-Technologies Corporation). The particle diameter of the glass powder is calculated with a laser scattering particle size analyzer (measurement wavelength: 632 nm, trade name: LS 13 320, manufactured by Beckman Coulter, Inc.). The softening point of the glass powder was measured by a differential thermal analysis (DTA) curve using a Thermogravimetry Differential Ther...

Embodiment 2

[0090] In addition to changing the glass powder to B with a spherical particle shape, an average particle size of 3.2 μm, and a softening point of 815°C 2 o 3 -SiO 2-Except for RO (R: Mg, Ca, Sr, Ba)-based glass powder (trade name: TMX-603, produced by Tokan Material Technology Co., Ltd.), p-type was formed in the same manner as in Example 1 diffusion layer. The surface on the side coated with the composition for forming a p-type diffusion layer exhibited a sheet resistance of 35Ω / □ and formed a p-type diffusion layer by diffusion of B (boron).

Embodiment 3

[0092] In addition to changing the glass powder to B with a spherical particle shape, an average particle size of 5.1 μm, and a softening point of 808°C 2 o 3 -SiO 2 - RO (R: Mg, Ca, Sr, Ba) based glass powder (trade name: TMX-403, produced by Tokan Material Technology Co., Ltd.), forming a p-type diffusion layer in the same manner as in Example 1 . The surface on the side coated with the composition for forming a p-type diffusion layer exhibited a sheet resistance of 45Ω / □ and formed a p-type diffusion layer by diffusion of B (boron).

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
softening pointaaaaaaaaaa
particle sizeaaaaaaaaaa
softening pointaaaaaaaaaa
Login to View More

Abstract

The present invention is a use of an acceptor element-containing glass powder for forming a p-type diffusion layer on a semiconductor substrate.

Description

[0001] This application is a divisional application of the national application number 201110031097.9 and the invention title is "a composition and method for forming a p-type diffusion layer, and a method for preparing a photovoltaic cell". [technical field] [0002] The present invention relates to a composition for forming a p-type diffusion layer of a photovoltaic cell, a method for forming a p-type diffusion layer, and a method for preparing a photovoltaic cell. More specifically, the present invention relates to a technique for forming a p-type diffusion layer capable of reducing internal stress of a silicon substrate used as a semiconductor substrate, whereby damage to crystal grain boundaries can be suppressed, and crystal Increase of defects and warpage. [Background technique] [0003] The related technical procedures of silicon photovoltaic cells are described below. [0004] First, in order to achieve high efficiency by promoting the optical confinement effect, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/223H01L31/18H01L31/068H01L21/22
CPCY02E10/547H01L21/2225H01L21/223H01L31/1804H01L31/068Y02E10/52Y02P70/50H01L31/02167H01L31/022425H01L31/0392H01L31/056Y02E10/50
Inventor 町井洋一吉田诚人野尻刚冈庭香岩室光则足立修一郎
Owner HITACHI CHEM CO LTD