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Method for preparing germanium on insulating layer by ge film bonding

A germanium and thin-film technology on an insulating layer, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of surface micro-voids and fragility, and achieve reduced fragility, low cost, and reduced chip fragmentation The effect of the risk

Active Publication Date: 2017-09-22
XIAMEN UNIV
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  • Abstract
  • Description
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Problems solved by technology

[0012] The purpose of the present invention is to provide a method for preparing germanium on an insulating layer by bonding a Ge thin film for the problems of surface micro-voids and fragility in the preparation of large-scale GOI by wafer bonding.

Method used

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Examples

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Embodiment Construction

[0028] The following examples will further illustrate the present invention.

[0029] 1. First, use SRIM 2008 software (Stopping and Range of Ions in Matter) to simulate the projected range of hydrogen ions at different energies, and then determine the implantation energy of hydrogen ions according to the required Ge thickness of the top layer of GOI. Deposit 90nm SiO on its surface by PECVD before implantation 2 , as a protective layer for hydrogen ion implantation. Then, hydrogen ions were implanted with LC-4 high-energy ion implanter at room temperature, and the implantation dose was 5×10 16 cm -2 , the injection energy is 250keV. The vacuum level of the target chamber during injection is 10 -6 Torr, the ion beam deviates from the sample normal by 7° to avoid channeling; at the same time, in order to prevent the self-heating effect caused by excessive beam current, the ion beam current density is controlled at 0.8μA / cm 2 about. After injection, dilute the SiO on the s...

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Abstract

The invention discloses a method for bonding preparation of Ge-on-insulator (GOI) through a Ge film, and relates to GOI. The method comprises the following steps: performing ion implantation on a Ge sheet to form a defect plane; binding PDMS with the processed Ge sheet by use of light cured glue; applying a cutting force parallel to a peeling plane on a processed flexible support substrate, and tearing a surface Ge film from a body Ge substrate along the defect plane to obtain a flexible Ge film; then obtaining the Ge film through polishing, then cleaning the Ge film and an SiO2 / Si wafer, performing bumping with the surface of the wafer by use of plasma, and at the same time, performing activation processing on the surface; attaching the processed Ge film to the SiO2 / Si wafer; fully discharging air of an interface by use of a rolling method; and performing pre-bonding on a sample after processing, afterwards, peeling the flexible susbtrate from a GOI structure, and performing annealing so as to enhance bonding surface energy and improve the bonding intensity.

Description

technical field [0001] The invention relates to germanium on an insulating layer, in particular to a method of mechanically peeling off a Ge wafer after ion implantation to obtain a flexible Ge thin film, and rolling the flexible Ge film to combine it with SiO 2 / Si surface bonding, combined with Ge film bonding of low-temperature bonding technology to prepare germanium on insulating layer. Background technique [0002] GOI materials have many unique physical properties, combining the higher carrier mobility of Ge materials and the advantages of low power consumption, radiation resistance, and high temperature resistance of SOI materials [1-3], and the manufacturing technology is more mature than the current The silicon process is compatible and becomes a very attractive new Si-based material. [0003] Partially or fully depleted device structures of VLSI require wafer size of 200mm and 300mm, while for MEMS, MOEMS, and Smart Power, wafers are usually required to be 4 inche...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02532H01L21/0257H01L21/02656H01L21/02661
Inventor 陈松岩刘翰辉亓东锋李成
Owner XIAMEN UNIV
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