III-nitride semiconductor/quantum dot hybrid white light LED device and preparing method thereof
Patent Information
- Authority / Receiving Office
- CN Β· China
- Current Assignee / Owner
- NANJING UNIV
- Publication Date
- 2015-08-26
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Abstract
Description
technical field
[0001] The invention relates to a group III nitride semiconductor / quantum dot mixed white light LED device and a preparation method thereof, belonging to the field of semiconductor lighting. Background technique
[0002] Group III nitride materials are direct bandgap semiconductors, and their bandgap covers from infrared to visible light to ultraviolet bands. They are ideal materials for solid-state lighting and low-power displays. Solid-state lighting is a brand-new lighting field. It mainly uses semiconductor chips as light sources to directly convert electrical energy into light energy with high conversion efficiency. As the core component of solid-state lighting semiconductor light source, LED has low energy consumption, long life, small size, green environmental protection, safe use, and can work in various harsh environments. It is a new generation of lighting source after incandescent lamps and fluorescent lamps. With the continuous development of lig...