A kind of preparation method of rare earth silicide single crystal crystal

Abstract

The invention discloses a method for preparing a rare earth silicide single crystal. The method comprises: 1. preparing a EuPd eutectic alloy; 2. according to the mass ratio Eu:Pd:Si=(33.3+X):(16.7-X) : 50 take by weighing palladium grain, silicon block and EuPd eutectic alloy, prepare PdSi binary alloy; Three, EuPd eutectic alloy and PdSi binary alloy are placed in induction heater and melt evenly, obtain melt, melt then Cast into rods; 4. Cut the rods to obtain seed crystal rods and feeding rods; 5. Install the feeding rods on the upper shaft in the crystal growth chamber, install the seed crystal rods on the lower shaft, and feed high-purity argon Gas, the crystal is grown by optical suspension zone melting method, and the crystal is taken out after the crystal growth is completed and cooled; 6. Rare earth silicide single crystal crystal is obtained after wire cutting. The invention can prepare rare earth silicide single crystals with less precipitation, no obvious dislocation and twins, and high quality.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and in particular relates to a method for preparing a rare earth silicide single crystal. Background technique [0002] Rare earth silicide single crystal containing volatile element Eu is an important material used in new disk storage and sensors. However, its growth is a difficult point, mainly because Eu element has the characteristics of low melting point, high vapor pressure and crystal matrix. Oriented precipitated phases exist in vivo. [0003] In order to suppress the volatilization of volatile elements during the crystal growth process, researchers at home and abroad have made various attempts, mainly taking three measures: 1) choose a faster growth rate to reduce the volatilization of volatile elements during the crystal growth process. loss, LiFePO was prepared by the suspension zone melting method in the literature "Floating zone growth of lithium iron(II) phosphate single cry...

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Problems solved by technology

[0004] It can be seen that increasing the growth rate and reducing the crystal growth time can reduce the loss of volatile elements in the whole process, but if the growth rate is too fast, the supercooling phenomenon of the crystal interface will easily cause the generation of the second phase. The method of high-pressure gas and circulating air flow can effectively suppress the volatilization of some elements (such as Li, Se), but it cannot effectively suppress the elements with high vapor pressure (such as Eu)

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