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A Nano Rectenna Based on Silicon Substrate

A nano-antenna and rectenna technology, which is applied in the field of optoelectronics and nanoscience, can solve the problems of low photoelectric conversion efficiency and other problems, and achieve the effect of promoting sustainable development and good photoelectric performance

Active Publication Date: 2017-08-29
BEIJING INST OF SPACECRAFT SYST ENG
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Problems solved by technology

[0005] The technical problem solved by the present invention is: to overcome the deficiencies of the prior art, to provide a nanometer rectenna based on a silicon-based substrate, to overcome the problem of low photoelectric conversion efficiency in the existing rectenna experiment, and to improve the rectenna placed in the Theoretical Study on Effects of Different Substrates on Conversion Efficiency

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  • A Nano Rectenna Based on Silicon Substrate
  • A Nano Rectenna Based on Silicon Substrate
  • A Nano Rectenna Based on Silicon Substrate

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with accompanying drawing.

[0019] The invention is an optical nanometer rectenna. The rectenna is an Au-TiOx-Ti structure, such as figure 1 As shown, the shape of the antenna is a fan-shaped bow tie, in which the left arm metal I is Au (work function 5.1eV), the right arm metal II is titanium Ti (work function 4.33eV), and the thickness of the antenna is h=100nm; the middle dielectric layer is titanium Oxygen compound, thickness d=5nm. The settings of other parameters are: the total length of the antenna L=4 μm, the opening angle θ=60°, and the effective distance between the two arms Geff=200 nm. The excitation source of the nano-rectenna device is a plane wave, the direction is the z-axis, that is, the direction perpendicular to the antenna; the polarization direction is the y-axis, that is, along the axial direction of the antenna arm, and the amplitude of the incident light field is 1V / m. The r...

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Abstract

The present invention relates to a nanometer rectification antenna based on a silicon substrate. The rectification antenna is an integrated structure composed of a nanometer antenna and a metal-insulator-metal diode, the left and right arms of the antennas are respectively metal I and metal II, and an insulating layer is in the middle. By placing the designed nanometer rectification antennas on the different substrates respectively, by a three dimensional electromagnetic field numerical value calculation method, the local area field intensity and the output powers of the rectification antennas are calculated under different incident light wavelengths, and finally the corresponding photoelectric conversion efficiency is calculated. A theory rule of the present invention is that: along with the increase of the substrate refractive index, a resonance wavelength generates red shift, and a maximum field enhancement coefficient and the photoelectric conversion efficiency are increased gradually. The theory calculation provides the design thought for the experiment preparation and production application of a rectification antenna battery, and facilitates the green low-cost development of a new energy technology.

Description

technical field [0001] The invention relates to a nanometer rectifying antenna based on a silicon-based substrate, belonging to the fields of optoelectronics and nanometer science and technology. Background technique [0002] Devices that convert radiated light into electrical energy mainly include traditional photovoltaic devices, nano rectennas, and thermal power devices. Nano-rectenna antennas composed of light-receiving nano-antennas and metal-insulator-metal (MIM) diodes have low manufacturing cost, simple structure, and can realize rectification of infrared light bands, so they have very broad application prospects. At present, the photoelectric conversion efficiency of rectennas reported in experiments is very low, only 0.1-1%. In addition, the theoretical research on the conversion efficiency of rectennas is not perfect enough, so it is of great significance to develop high-efficiency nano-rectennas. [0003] The rectenna fully applies the principle of light fluctua...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/04H01Q1/38
CPCY02E10/50
Inventor 张涛韩运忠周傲松王颖徐明明高文军贺涛胡海峰芦姗
Owner BEIJING INST OF SPACECRAFT SYST ENG