Built-in nanometer channel cooling quantum cascade semiconductor laser and preparation method thereof

A quantum cascade and nano-channel technology, which is applied in semiconductor lasers, lasers, phonon exciters, etc., can solve problems such as heat dissipation of terahertz quantum cascade lasers, achieve direct heat dissipation problems, stable working characteristics, and reduce electronic losses Effect

Active Publication Date: 2015-10-07
吉光半导体科技有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0006] In order to solve the problems existing in the prior art, the present invention provides a built-in nano-channel cooling quantum cascade semiconductor laser and its preparation method, which mainly solves the heat dissipation problem of the terahertz quantum cascade laser on the chip scale. The fabrication method is applicable to edge-emitting lasers, surface-emitting lasers and terahertz quantum cascade lasers

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  • Built-in nanometer channel cooling quantum cascade semiconductor laser and preparation method thereof
  • Built-in nanometer channel cooling quantum cascade semiconductor laser and preparation method thereof
  • Built-in nanometer channel cooling quantum cascade semiconductor laser and preparation method thereof

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Embodiment 1

[0034] Such as image 3 As shown, the preparation method of the built-in nanochannel cooling terahertz quantum cascade semiconductor laser includes the following steps:

[0035] Step 1: On the part of the terahertz quantum cascade laser core layer 2 that has been grown and manufactured, by photolithography or electron beam exposure, prepare the exposure and etching according to the distribution of the designed built-in nanochannels 2, one-time A trench with a width of 300nm, a depth of 300nm, a sidewall inclination angle of 60°, and a trench length of 1200 μm was etched.

[0036] Step 2: The built-in nanochannel 3 is grown to form the built-in nanochannel 3 by using the growth rate of different crystal orientations by the method of secondary epitaxial growth, and the epitaxy is continued until the top surface is leveled, and then the core layer 3 of the terahertz quantum cascade laser is continued to be prepared.

[0037] Step 3: In the spanning length of 1.6mm, including pho...

Embodiment 2 and Embodiment 3

[0040] The preparation method of the built-in nano-channel cooling terahertz quantum cascade semiconductor laser comprises the following steps:

[0041] Step 1: On the substrate 4, by means of photolithography or electron beam exposure, prepare the distribution pattern of the designed built-in nanochannels 2 for exposure and etching, and etch the groove structure at one time.

[0042] Step 2, by secondary epitaxial growth, using the different growth rates of different crystal orientations, to grow and form the built-in nanochannel 3, and continue the epitaxy until the top surface of the substrate 4 is leveled, and then continue to prepare the terahertz quantum cascade laser core Layer 3.

[0043] Step 3, complete the usual semiconductor laser process steps such as photolithography, etching, making insulating layer, overlay, making electrode window, making P-side electrode, substrate thinning and optical sectioning, preparing N-side electrode, etc., to prepare terahertz quantum...

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Abstract

Provided are a built-in nanometer channel cooling quantum cascade semiconductor laser and a preparation method thereof, belonging to the novel quantum cascade laser technical field. The laser comprises: diversion apertures, built-in nanometer channels, a terahertz quantum cascade laser core layer and a substrate. The terahertz quantum cascade laser core layer comprises an optical waveguide and non-luminance chip areas, and is prepared on the substrate; the diversion apertures are prepared in the non-luminance chip areas, and have depths deep enough to penetrate a plurality of built-in nanometer channels in a terahertz quantum cascade laser, and less than the depth sum between the terahertz quantum cascade laser core layer and the substrate. The laser directly cools chips, has high efficiency, and avoids the heat dissipation difficulty caused by thermal resistance of the substrate. The built-in nanometer channels can be prepared on the substrate, and can also be prepared in a semiconductor laser core layer. Appropriate work substances are selected to realize the operation of the terahertz quantum cascade laser under different temperatures.

Description

technical field [0001] The invention belongs to the technical field of novel terahertz quantum cascade lasers, and in particular relates to a built-in nano-channel cooling terahertz quantum cascade semiconductor laser and a preparation method thereof. Background technique [0002] Terahertz quantum cascade lasers are currently being more and more widely used in national defense, information security, detection, medical treatment, communication, national defense and other fields. However, due to their small size, high power, high heat generation, and difficult heat dissipation, they have been It affects the service life and device stability of terahertz quantum cascade lasers, so room temperature lasing has not been realized so far. [0003] In terahertz quantum cascade lasers, the main heat generation mechanisms include resistance heat generation, photon absorption heat generation, energy level and lattice energy exchange heat generation, etc. Heat is mainly generated in th...

Claims

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Application Information

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IPC IPC(8): H01S5/34H01S5/024
Inventor 陈泳屹秦莉宁永强王立军佟存柱单肖楠
Owner 吉光半导体科技有限公司
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