Enhanced radio frequency inductively coupled plasma discharge device

Abstract

The invention relates to an enhanced radio frequency inductively coupled plasma discharge device and belongs to the low-temperature plasma application technical field. According to an existing ICP discharge device, the density of plasmas is difficult to achieve a high numerical value due to weak collision, while, with the enhanced radio frequency inductively coupled plasma discharge device of the invention adopted, the above situation can be avoided. The enhanced radio frequency inductively coupled plasma discharge device comprises an upper end cover, a lower end cover, a cylinder quartz glass tube, a plurality of long rod bolts, an inner electrode coil and an outer electrode coil; the upper end cover, the lower end cover and the cylinder quartz glass tube jointly form a vacuum cavity air chamber; a plurality of upper end mounting holes are uniformly distributed at the outer edge portion of the upper end cover along the circumferential direction of the upper end cover; an inner electrode coil mounting hole and an air inlet are formed in the upper end cover; a plurality of lower end mounting holes are uniformly distributed at the outer edge portion of the lower end cover along the circumferential direction of the lower end cover; a measurement hole and a vacuumizing hole are formed in the lower end cover, wherein the measurement hole is used for accommodating a probe-class measuring component, and the vacuumizing hole is connected with a vacuumizing system through a vacuum corrugated pipe; the outer circumferential surface of the cylinder quartz glass tube is provided with the outer electrode coil; and the inner electrode coil is arranged in the vacuum cavity air chamber and is installed in the inner electrode coil mounting hole.

Description

technical field [0001] The invention relates to a large-area and stable plasma discharge reaction device which can be used for low-pressure generation, and belongs to the application technical field of low-temperature plasma. Background technique [0002] Material surface modification and surface treatment processes have been widely used in the global manufacturing industry. Traditional processes mainly include: thermal spraying, laser surface modification, electroplating, electroless plating and chemical transfer film, all of which have made great progress. develop. However, for some materials with special structures and special properties, for example, in the processing of ultra-large-scale integrated circuit manufacturing processes, it is required to etch nano-scale groove widths on large-area wafers, and with the increasing technical requirements, more and more Thin etch line width is difficult to achieve with traditional techniques. Therefore, a new process technology...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the plasma density is difficult to reach a high value due to the weak collision of the existing ICP discharge device, and provides an enhanced radio frequency inductively coupled plasma discharge device. high density, large area, uniform and stable plasma device

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