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Perovskite-based inverted thin film solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of inability to prepare flexible substrates and increase costs, and achieve the effects of low cost, good stability and low cost

Active Publication Date: 2015-10-28
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a high temperature will inevitably increase the cost in industrial production, and there is no way to prepare it on a flexible substrate

Method used

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  • Perovskite-based inverted thin film solar cell and preparation method thereof
  • Perovskite-based inverted thin film solar cell and preparation method thereof
  • Perovskite-based inverted thin film solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] (1) the NH 2 CH=NH 2 I(FAI) and PbI 2 Mix and dissolve in N,N-dimethylformamide (DMF) solvent at a molar ratio of 1:1, stir at room temperature for 12 hours, and filter the solution with a 0.22 um organic filter head;

[0035] (2) Provide a patterned ITO conductive glass substrate. After scrubbing with detergent, use acetone, ethanol, and deionized water to ultrasonically clean each twice for ten minutes each time, and then put it in a drying oven to dry ;

[0036] (3) Ozone treatment was performed on the dried ITO conductive glass substrate, and the ozone treatment time was 15 min;

[0037](4) Spin-coat a layer of PEDOT:PSS on the surface of the ITO conductive glass substrate at a rotational speed of 4000 rpm / 40 s, and then perform annealing treatment at 140°C / 15 min (the preparation of this layer is carried out in an atmospheric environment );

[0038] (5) Transfer the ITO conductive glass substrate to the glove box and spin-coat FAPbI 3 The perovskite precursor...

Embodiment 2

[0045] (1) the NH 2 CH=NH 2 I(FAI) and PbI 2 Mix and dissolve in N,N-dimethylformamide (DMF) solvent at a molar ratio of 1:1, stir at room temperature for 12 hours, and filter the solution with a 0.22 um organic filter head;

[0046] (2) Provide a patterned ITO conductive glass substrate. After scrubbing with detergent, use acetone, ethanol, and deionized water to ultrasonically clean each twice for ten minutes each time, and then put it in a drying oven to dry ;

[0047] (3) Ozone treatment was performed on the dried ITO conductive glass substrate, and the ozone time was 15 min;

[0048] (4) Spin-coat a layer of PEDOT:PSS precursor solution on the surface of ITO at a speed of 4000 rpm / 40 s, and then perform annealing treatment at 140°C / 15 min (the preparation of this layer is carried out in an atmospheric environment) ;

[0049] (5) Transfer the ITO conductive glass substrate to the glove box and spin-coat FAPbI 3 The perovskite precursor layer was cleaned with chlorobe...

Embodiment 3

[0053] The difference between this example and Example 1 is that the hole transport layer material is graphene oxide (GO), and other steps are the same as Example 1.

[0054] The device structure of Example 3 is ITO / GO / FAPbI3 / PCBM / BCP / Ag.

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Abstract

The invention belongs to the field of thin film solar cells and relates to a perovskite-based inverted thin film solar cell and a preparation method thereof. The inverted thin film solar cell is based on an inverted planar structure, uses a FAPbI3 perovskite system as a light absorption layer, and is prepared by a solution method under a low temperature condition. The inverted thin film solar cell uses the novel FAPbI3 perovskite system as the light absorption layer. Compared with a conventional MAPbI3 perovskite system, the FAPbI3 perovskite system has a wider absorption range, higher phase inversion temperature, and better stability, prevents a high-temperature sintering defect in a conventional inverted structure, and may greatly decrease cost in industrialized production. The preparation method of theinverted thin film solar cell is simple, low in cost, good in repeatability, achieves a low-cost reel-to-reel mode, and has potential application value in the future industrialized production.

Description

technical field [0001] The invention belongs to the field of thin-film solar cells, and relates to an inverted thin-film solar cell based on a perovskite material and a preparation method thereof. Background technique [0002] As a new type of light-absorbing layer material, perovskite was first used in solar cells in 2009. After six years of development, its energy conversion efficiency has increased from the initial 3.8% to over 20%. However most of the work is based on CH 3 NH 3 PB 3 (or CH 3 NH 3 PB 3-x Cl x ) system, the band gap of this perovskite material is about 1.55 eV, which has not yet reached the ideal band gap (1.4 eV) of photovoltaic materials. Moreover, it was reported that CH 3 NH 3 PB 3 (MAPbI 3 ) system of perovskite has a very low phase transition temperature, which is bound to affect the stability of the device. [0003] NH 2 CH=NH 2 PB 3 (FAPbI 3 ), as a new type of perovskite material, has been used as an active layer in perovskite so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/00H10K99/00
CPCH10K71/12H10K85/00H10K30/30Y02E10/549
Inventor 廖良生袁大星王照奎
Owner SUZHOU UNIV
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