A kind of helical gan single crystal nanowire and its preparation method

Abstract

The invention relates to a helical GaN single crystal nanowire and a preparation method thereof, belonging to the technical field of semiconductor nanomaterial production; the method is to prepare a helical GaN nanowire by chemical vapor deposition, and weigh an appropriate amount of metal Ga to be placed in a ceramic In the boat, place it in the middle of the horizontal tube furnace, weigh an appropriate amount of MoCl5 and place it in the ceramic boat, and place it at an upstream position 20-30cm away from the central temperature zone, and at the same time, at a position 20-25cm away from the central temperature zone Place the gold-plated Si substrate, seal the horizontal tube furnace; start the vacuum system, when the vacuum degree in the furnace reaches 1×10‑3Pa; feed Ar gas, heat and keep warm, adjust the Ar gas to 10 sccm, and turn off the ammonia at the same time Ammonia gas is introduced into the gas flow valve, and after the reaction is carried out for 1~2h, the ammonia gas is disconnected and cooled to room temperature, and finally a layer of deposit is collected on the Si substrate, which is a helical GaN single crystal nanowire; this method is easy to implement , The process is simple and the cost is low.

Description

technical field [0001] The invention relates to a nanometer material and a preparation method thereof, in particular to a helical GaN single crystal nanowire and a preparation method thereof, relates to the preparation research of a semiconductor material, and belongs to the technical field of semiconductor nanometer material production. Background technique [0002] GaN is a semiconductor with a large band gap, which belongs to the so-called wide band gap semiconductor. It is an excellent material for microwave power transistors and a semiconductor with important application value in blue light-emitting devices. GaN is an extremely stable compound and a hard high-melting point material with a melting point of about 1700°C; GaN has a high degree of ionization, which is the highest among III-V compounds; under atmospheric pressure, GaN crystals are generally hexagonal fibers Zinc ore structure; it has 4 atoms in a unit cell, and the atomic volume is about half that of GaAs; a...

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Problems solved by technology

[0004] Some researchers used chemical vapor deposition to study the MnCl 2 、CoCl 2 and CrCl 3 The impact on the growth of GaN nanowires, and related mechanism research, the difference in the amount and concentration of the transition metal chloride species placed in the tube furnace before the reaction, the microscopic morphology of the grown GaN nanostructures is also different. Corresponding changes will occur, such as hexagonal, triangular, and square cross-sections, but this change does not involve zigzag nanowires, helical structures, see NanoLetters, Vol. 8 (No. 9) No. 2674 to 2681 pages

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