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Manufacturing method of semiconductor memory

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., to achieve the effect of saving process time and reducing process cost

Inactive Publication Date: 2015-11-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In summary, the manufacturing process flow of flash memory in the prior art is: FGPH / SiNetch→SP1dep→SP1etch→CGph / etch→SP2etch / SLCMP→FLG2ph / SiNetch / HDPox / CMP→SiNremove&CG2etch, the process of storage area and connection area The formation of the window requires two different photomasks and two etching processes, and the filling of the two process windows requires correspondingly different filling processes and chemical mechanical polishing processes. Therefore, the existing process steps need to be simplified to reduce cost

Method used

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  • Manufacturing method of semiconductor memory
  • Manufacturing method of semiconductor memory

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Embodiment 1

[0042] Please refer to figure 2 , the present embodiment provides a method for manufacturing a semiconductor memory, including:

[0043] S21, providing a semiconductor substrate having a storage region and a connection region, on which a control gate layer and a cover layer are formed;

[0044] S22, using an integrated photomask capable of defining the position of the storage unit in the storage area and the position of the connection hole in the connection area as a mask, photolithography and etching the cover layer, forming a storage window at the position of the storage unit in the storage area, and forming a storage window in the connection A connection window is formed at the connection line position of the area, and the storage window is wider than the connection window;

[0045] S23, depositing a first interlayer dielectric layer on the surface of the device forming the storage window and the connection window, and performing high-temperature reflow on the first inter...

Embodiment 2

[0060] Please refer to Figure 4 , the present embodiment provides a method for manufacturing a semiconductor memory, including:

[0061] S41, providing a semiconductor substrate having a storage region and a connection region, on which a control gate layer and a cover layer are formed;

[0062] S42, using an integrated photomask capable of defining the location of the storage unit in the storage area and the location of the connection hole in the connection area as a mask, photolithography and etching the cover layer, forming a storage window at the location of the storage unit in the storage area, and forming a storage window in the connection A connection window is formed at the connection line position of the area, and the storage window is wider than the connection window;

[0063] S43, depositing a first interlayer dielectric layer on the surface of the device forming the storage window and the connection window, and performing high-temperature reflow on the first inter...

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Abstract

The invention provides a manufacturing method of a semiconductor memory. A patterned integrated mask integrating a conventional floating gate mask and a control grid protective mask is actually utilized, and etching processes and filling processes of a storage unit technical window in a storage area and a connecting hole technical window in a connecting area are merged, such that at the time when a storage window is formed at the position of a storage unit simply through one lithography and etching process at a time, a connecting window is also formed at a wiring position, the storage window is far wider than the connecting window, afterwards, a first dielectric layer is formed through a deposition process, high-temperature backflow is carried out, and the connecting window is directly filled up. According to the invention, the technical steps of masking, etching, filling and grinding at the connecting area by use of an individual mask in a conventional process are omitted, the process time is saved, and the process cost is decreased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor memory. Background technique [0002] At present, flash memory (Flash Memory), also known as flash memory, has become a mainstream memory of non-volatile memory. According to different structures, flash memory can be divided into or non-flash memory (NORFlash) and NAND flash memory (NAND Flash). The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications. Flash memory (Flash Memory, referred to as flash memory) is a programmable erasable, non-volatile (non-volatile) memory, that is, it can save information content even when there is no external power supply, which make...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247
CPCH10B41/10
Inventor 张怡
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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