Method for manufacturing double-face passivated solar cell

Abstract

The invention discloses a method for manufacturing a double-face passivated solar cell, and includes the steps of: A. front side passivation, B. reverse side passivation, and C. manufacture of a metal electrode. Front side passivation mainly includes: 1) adopting PECVD to deposit an N type alpha-Si thin layer with a thickness of 20 to 500nm on the front side of the solar cell; 2) adopting PECVD to deposit a SiOx thin layer with a thickness of 1 to 10nm on the surface of the N type alpha-Si thin layer; and 3) adopting PECVD to deposit a SiNx thin layer with a thickness of 70 to 120nm; and reverse side passivation mainly includes: 1) adopting PECVD to deposit a P type alpha-Si thin layer with a thickness of 20 to 500nm; 2) adopting an atomic layer deposition method to deposit a Al2O3 thin layer with a thickness of 10 to 300nm on the P type alpha-Si thin layer; and 3) adopting PECVD to deposit a SiNx thin layer with a thickness of 30 to 120nm. Compared with a conventional passivation method, the scheme adopts PECVD and the atomic layer deposition method to form a passivation layer, a lattice structure is not damaged, and a passivation effect is better. At the same time, back electrode slurry and positive electrode slurry have good conductivity, and have a capability of adapting to higher sheet resistance.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for manufacturing double-sided passivated solar cells. Background technique [0002] Solar cells, also known as "solar chips" or "photovoltaic cells", are photoelectric semiconductor sheets that use sunlight to generate electricity directly. As long as it is illuminated by light, it can output voltage instantly and generate current when there is a loop. An important direction for the development of high-efficiency solar cells is the use of passivation. The passivation of the front is to use PECVD to make H-doped silicon nitride layer to passivate the surface dangling bonds; the back passivation is to use aluminum heavy doping to form aluminum back field or use atomic layer deposition aluminum oxide layer to form field passivation. These two methods can have a good passivation effect on the current silicon wafers, but there are still some disadvantages: [0003] 1) The H dop...

AI Technical Summary

Problems solved by technology

[0003] 1) The H doping concentration on the front side is not high, and the passivation effect is not good;

[0004] 2) Heavy aluminum doping destroys crystalline silicon, and the passivation effect is greatly reduced;