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A kind of ultra-thin Ge single crystal substrate material and preparation method thereof

A substrate material and single crystal technology, applied in the field of ultra-thin Ge single crystal substrate material and its preparation, can solve problems such as wafer damage, affecting product quality, deterioration, etc., and achieve the effect of good wafer flatness

Active Publication Date: 2018-11-06
BEIJING TONGMEI XTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if ultra-thin wafers are produced, the process of "film sticking" will cause wafer damage; in addition, the surface flatness parameters of the film-stick polished wafers, such as flatness (TTV), warpage (Bow), etc., will be significantly worse. affect product quality

Method used

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  • A kind of ultra-thin Ge single crystal substrate material and preparation method thereof
  • A kind of ultra-thin Ge single crystal substrate material and preparation method thereof
  • A kind of ultra-thin Ge single crystal substrate material and preparation method thereof

Examples

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preparation example Construction

[0018] The method for preparing Ge single crystal substrate material of the present invention comprises the following steps:

[0019] (1) cutting out a wafer with a thickness of 140-250 microns by a crystal rod;

[0020] (2) Thinning the back of the wafer on the thinning machine, and then putting the wafer into the etching solution for wet etching;

[0021] (3) On the thinning machine, the main surface of the wafer is thinned, and the thinned wafer is fixed on a support with an adhesive, wherein the support is a rigid flat plate, and then fixed on the support wafers are polished;

[0022] (4) Use water and / or organic solvents to remove the binder.

[0023] Preferably, polishing is performed only once.

[0024] The resulting wafer product has a thickness of 60-160 microns, preferably 70-140 microns, more preferably 80-120 microns, most preferably 90-110 microns; a diameter of 2-24 centimeters, preferably 3-22 centimeters, more preferably 5-20 cm; surface roughness Ra is 0.2...

Embodiment 1

[0072] Cut out 20 circular wafers with the same thickness at one time by a Ge circular crystal rod with a diameter of 12 cm with a multi-wire cutting machine, and the thickness is 180 microns; use a chamfering machine to chamfer the edges of each circular wafer, Make its edge section arc. Put the main face down of the wafer on the machine table of the 8000# grinding wheel thinning machine, suck the wafer on the flat machine table by vacuuming to ensure that there is no gap between the wafer and the machine table, and then adjust the machine parameters , Send the wafer into the machine for thinning processing. Then the wafer is put into the hydrofluoric acid of 40% by weight concentration and the nitric acid of 65% by weight concentration and carry out wet etching in the mixed solution of 1.0:2.0 volume ratio, removes the residual wear debris of previous processing, corrodes simultaneously the wafer surface The damaged layer (about 10 microns) exposes the most complete single ...

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Abstract

The invention relates to a preparation method of an ultrathin Ge single crystal substrate material. The preparation method comprises the steps that 1, a wafer with a thickness of 40-250 micrometers is cut out through a crystal bar; 2, the back face of the wafer is thinned on a thinning machine, and then the wafer is placed in corrosive liquid for wet etching; 3, the main face of the wafer is thinned on the thinning machine, the thinned wafer is fixed to a supporting body through a binding agent, a rigid flat plate serves as the supporting body, and then the wafer fixed to the supporting body is polished; and 4, the binding agent is removed with water and / or organic solvent. The invention further relates to the ultrathin Ge single crystal substrate material. The thickness of the material ranges from 60 micrometers to 160 micrometers. The diameter of the material ranges from 2 cm to 24 cm. The surface roughness Ra of the material ranges from 0.2 nanometer to 0.5 nanometer. The flatness of the material ranges from 1.5 micrometers to 4 micrometers. The curvature of the material ranges from 2 micrometers to 5 micrometers. The warpage of the material is 5-+5 micrometers.

Description

technical field [0001] The present invention relates to a Ge single crystal substrate material and a preparation method thereof, more specifically, to an ultra-thin Ge single crystal substrate material and a preparation method thereof. Background technique [0002] Germanium single crystal substrate material is widely used as a basic material. For example, triple-junction solar cells based on germanium wafers have been used in space power supply systems around the world due to their good performance and high photoelectric conversion rate; at the same time, with the development of technology, the manufacturing cost of triple-junction solar cells has decreased. The demand for germanium wafers for solar cells in the terrestrial photovoltaic market will also have great potential. As the upstream industry of triple-junction solar cell manufacturing, germanium single crystal substrate materials are urgently needed to reform in terms of reducing manufacturing costs, thinning wafer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B1/00
CPCB24B1/00
Inventor 王元立冯奎刘文森
Owner BEIJING TONGMEI XTAL TECH CO LTD