Photoresist stripper and application thereof

Abstract

The invention provides a photoresist stripper comprising components in percentage by mass as follows: 1%-5% of inorganic base, 3%-12% of alkali metal salt, 4%-10% of organic base, 3%-10% of an organic solvent, 1%-10% of a high-molecular polymer, 0.1%-2% of a chelating agent, 0.1-3% of a corrosion inhibitor and the balance of deionized water, wherein the high-molecular polymer is polyethylene glycol and / or polypropylene glycol, the chelating agent contains potassium or sodium, and the corrosion inhibitor contains sodium benzoate. The stripper is basically free of bubbles and has a bubble inhibition effect during usage; the stripper is a uniform solution at the room temperature but can be layered at the usage temperature, stripped photoresist films can float on supernatant liquids, are prevented from sinking to the bottom and being pumped by a circulating pump and cannot block a filter net and a filter element, the service life can be prolonged, and the film stripping efficiency can be improved. The stripper has the high stripping rate at the usage temperature, enables products to have better cleanliness and does not corrode ITO (indium tin oxide) circuits and substrates.

Description

technical field [0001] The invention relates to a photoresist water-based stripping liquid composition used in a semiconductor manufacturing process. The stripping liquid can effectively remove the photoresist after exposure, and does not corrode the ITO circuit, and is not easy to block the filter screen during recycling and filter element. Background technique [0002] In the manufacturing process of large-scale integrated circuits, photoresist strippers have been widely used as cleaning agents on the production line. In the manufacturing process, the photoresist film is baked at high temperature, deposited on the surface of ITO glass, and then exposed, developed, etched, and finally becomes a circuit pattern. After the etching process, the exposed photoresist must be removed from the surface of the circuit pattern without damaging the ITO and glass substrates, so that the subsequent operations can be performed. [0003] The aqueous stripping solution of conventional neg...

AI Technical Summary

Problems solved by technology

[0006] All above-mentioned stripping liquids avoid the use of strong alkali potassium hydroxide and sodium hydroxide on purpose, so that the stripping effect of photoresist is greatly limited; The stripped photoresist is easy to sink to the bottom, easy to be pumped away by the circulation pump, and difficult to filter and separate

In addition, a certain amount of surfactant is used in the cleaning agent of patent application CN200810011907.2, which will cause the problem of foam generation during the spraying process

However, the stripping liquid provided by patent application 201410525218.9 uses a large amount of organic solvents. On the one hand, its cost is high, and on the other hand, it is easy to cause harm to operators and the environment; and the alkaline substance used in this patent application is an organic amine. Organic amines are volatile in the stripping solution, which is not conducive to the stability of the stripping speed