PID-resistant crystalline silicon cell preparation method
A technology of crystalline silicon cells and silicon substrates, applied in the field of solar cells, can solve the problems that silicon nitride films cannot meet insulation requirements, PID attenuation, component output power decline, etc., achieve good passivation, reduce equipment costs, and reduce Effects of small PID phenomena
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[0018] Example 1
[0019] A method for preparing anti-PID crystalline silicon battery includes the following steps:
[0020] 1) Cleaning, texturing, diffusion and wet etching of the silicon substrate;
[0021] 2) The wet-etched silicon substrate is oxidized with a mixture of ozone and nitrogen with an ozone concentration of 30 ppm to form a silicon dioxide film on the silicon substrate;
[0022] 3) Use PECVD equipment to deposit a layer of Si with a thickness of 80nm and a refractive index of 2.01 on the surface of the silicon substrate after step 2). 3 N 4 membrane;
[0023] 4) After screen printing and sintering, the anti-PID crystalline silicon battery is obtained, which is marked as 1#.
[0024] Wherein, in step 2), the ozone and nitrogen mixture is sprayed onto the surface of the silicon substrate, the gas flow rate is 30 L / min, the passing speed of the silicon wafer is 2.3 m / min, and the reaction temperature is 50°C.
Example Embodiment
[0025] Example 2
[0026] A method for preparing anti-PID crystalline silicon battery includes the following steps:
[0027] 1) Cleaning, texturing, diffusion and wet etching of the silicon substrate;
[0028] 2) The wet-etched silicon substrate is oxidized with an ozone-nitrogen mixture with an ozone concentration of 35 ppm to form a silicon dioxide film on the silicon substrate;
[0029] 3) Use PECVD equipment to deposit a layer of Si with a thickness of 82.7nm and a refractive index of 2.05 on the surface of the silicon substrate treated in step 2). 3 N 4 membrane;
[0030] 4) After screen printing and sintering, the anti-PID crystalline silicon battery is obtained, which is marked as 2#.
[0031] Wherein, in step 2), the ozone-nitrogen mixture is sprayed onto the surface of the silicon substrate, the gas flow rate is 40 L / min, the passing speed of the silicon wafer is 2.1 m / min, and the reaction temperature is 55°C.
Example Embodiment
[0032] Example 3
[0033] A method for preparing anti-PID crystalline silicon battery includes the following steps:
[0034] 1) Cleaning, texturing, diffusion and wet etching of the silicon substrate;
[0035] 2) The wet-etched silicon substrate is oxidized with an ozone-nitrogen mixture with an ozone concentration of 50 ppm to form a silicon dioxide film on the silicon substrate;
[0036] 3) Use PECVD equipment to deposit a layer of Si with a thickness of 83nm and a refractive index of 2.07 on the surface of the silicon substrate treated in step 2). 3 N 4 membrane;
[0037] 4) After screen printing and sintering, the anti-PID crystalline silicon battery is obtained, which is marked as 3#.
[0038] Wherein, in step 2), the ozone and nitrogen mixed gas is sprayed onto the surface of the silicon substrate, the gas flow rate is 40 L / min, the passing speed of the silicon wafer is 2.2 m / min, and the reaction temperature is 65°C.
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