Gan-based LED epitaxial structure and preparation method thereof

Abstract

The invention provides a GaN-based LED epitaxy structure and a preparation method thereof. The preparation method comprises steps of providing a growth substrate and growing a buffering layer on the growth substrate; successively growing an un-doped GaN layer and an N-type GaN layer on the buffering layer; growing an InGaN / GaNsuperlattice quantum well structure on the N-type GaN layer; growing an InGaN / GaN multiple-quantum well luminous layer structure on the InGaN / GaNsuperlattice quantum well structure; adding H<2> when growing the InGaN / GaN multiple-quantum well luminous layer structure, wherein the flow of the added H<2> when growing an InGaN potential well is far less than that of added H<2> when growing a GaN potential barrier; growing a P-type electronic barrier layer on the InGaN / GaN multiple-quantum well luminous layer structure; and growing P-type GaN layer on the P-type electronic barrier layer. In this way, by controlling the flow of the H<2> during growing process of the InGaN / GaN multiple-quantum well luminous layer structure, quality of crystal can be improved,materials of the InGaN potential well will not be damaged by corrosion, and crystal defect in the quantum well structure is reduced, thereby reducing the non-radiative composite efficiency of electrons and electron holes in an active area in the InGaN / GaN multiple-quantum well luminous layer structure.

Description

technical field [0001] The invention belongs to the field of semiconductor luminescence, and in particular relates to a GaN-based LED epitaxial structure and a preparation method thereof. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) has been widely used in various fields due to its advantages of long life and low energy consumption, especially as its lighting performance index is greatly improved day by day, LED is often used as a light emitting device in the lighting field. Among them, the III-V compound semiconductor represented by gallium nitride (GaN), especially the InGaN / GaN (indium gallium nitride / gallium nitride)-based LED has a wide band gap, high luminous efficiency, and electron saturation drift speed. High, stable chemical properties, etc., have great application potential in the field of high-brightness blue light-emitting diodes, blue lasers and other optoelectronic devices, and have attracted widespread attention. [0003] Si...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a GaN-based LED epitaxial structure and its preparation method, which is used to solve the problem of subsequent growth of GaN caused by the easy decomposition of InGaN materials at high temperatures in the prior art. The temperature does not reach the required temperature, and the crystal quality of the grown GaN material is poor, which makes the InGaN / GaN quantum well structure prone to defects and increases the problem of non-radiative recombination efficiency.

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