Carbon-based material resistance variation memory cell having abnormal resistance variation characteristic and preparation method

Abstract

The invention discloses a carbon-based material resistance variation memory cell having an abnormal resistance variation characteristic and a preparation method. The carbon-based material resistance variation memory cell includes a substrate layer, a lower electrode layer located on the substrate layer, a resistance variation layer located on the lower electrode layer and an upper electrode layer located on the resistance variation layer, the resistance variation layer is an a-C / Fe thin film resistance variation layer doped with Fe in an amorphous carbon film, the doping amount of Fe is 4 at%. According to the carbon-based material resistance variation memory cell provided by the invention, Fe is doped in amorphous carbon, thereby enabling the oxygen-free a-C / Fe thin film resistance variation layer to have magnetism and an abnormal resistance variation characteristic, and resistance variation performance is stable, thereby enabling the thin film to have unique magnetic properties such as relatively high coercivity and giant magnetoresistance and magneto-transport properties; and the carbon-based material resistance variation memory cell is simple in structure and low in cost.

Description

technical field [0001] The invention relates to a storage device and a preparation method thereof, in particular to a resistive variable memory and a preparation method thereof, which are applied in the technical fields of electrochemistry and microelectronics. Background technique [0002] Currently, silicon-based flash devices account for half of the non-volatile memory (NVM) market due to their high density and low cost. With the development and popularization of various portable digital products such as mobile storage devices, mobile phone communication devices, and digital cameras, the market demand for non-volatile storage has further increased. In addition to high density and low cost, it should also have low power consumption, read It has the characteristics of fast writing speed, stable performance and long storage time. However, the scaling feature of flash memory, that is, to further increase the density of flash memory, is approaching its physical limit. Therefo...

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Problems solved by technology

Recently, in ZnO and Nb:SrTiO 3 An abnormal resistive switching characteristic was found in , and the SET or RESET process appeared at zero bias, but ZnO and Nb:SrTiO 3 The magnetic properties and magnetic output characteristics are not ideal enough, and the preparation cost is also high. At present, the research on Fe-doped amorphous carbon film resistive memory unit has not been reported in the literature.

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