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Preparation method of bismuth-doped tin oxide films

A tin oxide and thin film technology, applied in the field of preparation of tin oxide thin films, can solve the problems of complicated powder preparation process, difficult to guarantee the uniformity of the film layer, easy agglomeration of nano powder, etc., and achieves convenient production process and simple and easy preparation process. easy, low-cost effect

Active Publication Date: 2015-12-16
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, no matter it is the buffer layer for film formation or the method of preparing the powder, there are deficiencies. First, when the bismuth doping ratio is 5%, the maximum resistivity of the powder is only 21Ω·cm, and the nanopowder The body is easy to agglomerate, and it is extremely difficult to ensure the uniformity of the film layer of the buffer layer film obtained by coating it; secondly, the preparation process of the powder is complicated, time-consuming, labor-intensive and energy-consuming

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  • Preparation method of bismuth-doped tin oxide films
  • Preparation method of bismuth-doped tin oxide films

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Embodiment 1

[0026] The concrete steps of preparation are:

[0027] Step 1, placing the bismuth-tin mixed target and quartz glass on the cathode and the sample stage in the vacuum chamber of the magnetron sputtering equipment respectively; wherein, the bismuth-tin mixed target is composed of metal bismuth and metal tin with an area ratio of 1%:99% Proportional composition, the distance between the bismuth-tin mixed target and the quartz glass is 18cm, and the inclination angle is 5.5 degrees.

[0028] Step 2, wait until the vacuum degree of the vacuum chamber is ≤10 -3 After Pa, the quartz glass was heated to 300 °C, and the vacuum chamber was placed under an argon atmosphere. Then pre-sputtering was performed on the quartz glass and the bismuth-tin mixed target for 5 min and 10 min respectively; wherein, the power of the pre-sputtering was 50W. After that, put the vacuum chamber in an argon-oxygen mixed atmosphere, and sputter for 15 minutes to obtain a sputtered thin film; wherein, the...

Embodiment 2

[0030] The concrete steps of preparation are:

[0031] Step 1, place the bismuth-tin mixed target and the quartz glass on the cathode and the sample stage in the vacuum chamber of the magnetron sputtering equipment respectively; wherein, the bismuth-tin mixed target is composed of metal bismuth and metal tin with an area ratio of 3%: 97% Proportional composition, the distance between the bismuth-tin mixed target and the quartz glass is 19cm, and the inclination angle is 6 degrees.

[0032] Step 2, wait until the vacuum degree of the vacuum chamber is ≤10 -3 After Pa, the quartz glass was heated to 300 °C, and the vacuum chamber was placed under an argon atmosphere. Then pre-sputtering was performed on the quartz glass and the bismuth-tin mixed target for 5 min and 10 min respectively; wherein, the power of the pre-sputtering was 50W. After that, put the vacuum chamber in an argon-oxygen mixed atmosphere, and sputter for 16 minutes to obtain a sputtered thin film; wherein, th...

Embodiment 3

[0034] The concrete steps of preparation are:

[0035] Step 1, placing the bismuth-tin mixed target and the quartz glass on the cathode and the sample stage in the vacuum chamber of the magnetron sputtering equipment respectively; wherein, the bismuth-tin mixed target is composed of metal bismuth and metal tin with an area ratio of 5%:95% Proportional composition, the distance between the bismuth-tin mixed target and the quartz glass is 20cm, and the inclination angle is 6.5 degrees.

[0036] Step 2, wait until the vacuum degree of the vacuum chamber is ≤10 -3 After Pa, the quartz glass was heated to 300 °C, and the vacuum chamber was placed under an argon atmosphere. Then pre-sputtering was performed on the quartz glass and the bismuth-tin mixed target for 5 min and 10 min respectively; wherein, the power of the pre-sputtering was 50W. After that, put the vacuum chamber in an argon-oxygen mixed atmosphere, and sputter for 18 minutes to obtain a sputtered film; wherein, the ...

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Abstract

The invention discloses a preparation method of bismuth-doped tin oxide films. By adopting the magnetron sputtering method, the preparation method mainly comprises the steps of placing a bismuth-tin mixed target on a cathode in a vacuum chamber of a magnetron sputtering device and placing silica glass in a sample table in the vacuum chamber of the magnetron sputtering device; enabling the vacuum chamber to be in the argon and oxygen mixed atmosphere after the vacuum degree of the vacuum chamber is smaller than or equal to 10<-3> Pa, carrying out sputtering for 15-20 minutes to obtain sputtered films and preparing the bismuth-doped tin oxide films after the sputtered films are cooled to indoor temperature, wherein the film thickness ranges from 80 nm to 120 nm, the content of crystalline-state bismuth in the films ranges from 1% to 3.8%, the electrical resistivity of the films is larger than or equal to 4.22 omega.cm, and the visible light transmittance of the films ranges from 84.64% to 88.47%. Being uniform in thickness, easy to control and flat and compact in surface, the films can be widely applied to the fields of solar cells, optoelectronic devices and the like.

Description

technical field [0001] The invention relates to a preparation method of a tin oxide film, in particular to a preparation method of a bismuth-doped tin oxide film. Background technique [0002] With the continuous development of society, environmental pollution and fossil energy shortage are becoming more and more serious, which have become two important problems that restrict the sustainable development of human beings and need to be solved urgently. Solar energy has been favored by people as an inexhaustible source of clean energy, and CIGS is CuInSe 2 and CuGaSe 2 Although its thin-film solar cell is a compound thin-film solar cell with great development potential, high photoelectric conversion efficiency and low cost, it needs a layer as a low-bandgap CIGS absorber layer and a high-bandgap ZnO The transitional transparent and non-conductive buffer layer between the window layers can reduce the lattice mismatch and band gap disorder of the high and low band gaps, and pre...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
Inventor 刘倩文潘书生罗媛媛李广海
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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