a h 2 Treated amorphous igzo transparent oxide film and preparation method thereof
A transparent oxide and amorphous thin film technology, which is applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve problems that cannot meet TFT performance requirements, reduce internal defects, reduce resistance, and improve stability sexual effect
Active Publication Date: 2018-01-19
宁波云涂科技有限公司
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Problems solved by technology
Although these designs have improved the performance of the dielectric protective film to varying degrees, they still cannot meet the performance requirements of TFT. Therefore, the research on the modification of TFT channel layer materials still needs to be improved.
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[0027] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0028] a H 2 The preparation method of the amorphous IGZO transparent oxide film of processing comprises the following steps:
[0029] 1) In the growth of SiO 2 Sputtering an IGZO amorphous film on a Si substrate to obtain a silicon substrate with an IGZO amorphous film;
[0030] 2) The silicon substrate with the IGZO amorphous film grown on the N 2 Under the atmosphere, keep the temperature at 350-450° C. for 45-75 minutes to obtain an amorphous IGZO transparent oxide film.
[0031] Specifically, in step 1), the JPG-450a type double-chamber magnetron sputtering equipment is used to sputter the IGZO amorphous film, wherein the target is an IGZO target, and argon gas with a purity of 99.99% is introduced; the sputtering power is 80W , bias voltage -100V, argon flow rate 50sccm, working pressure 0.2Pa; pre-sputtering time 15min, sputtering time 90min.
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Abstract
The present invention relates to an amorphous IGZO transparent oxide thin film by H2 processing and a preparation method thereof. The preparation method comprises the steps of 1) sputtering an IGZO amorphous thin film on a Si substrate on which the SiO2 grows to obtain a silicon substrate on which the IGZO amorphous thin film grows; 2) using an atmosphere protection annealing tube furnace to carry out the heat preservation operation on the silicon substrate on which the IGZO amorphous thin film grows for 45-75 minutes, under the atmosphere of N2 and at the temperature of 350 DEG C to 450 DEG C to obtain the amorphous IGZO transparent oxide thin film. The amorphous IGZO transparent oxide thin film prepared by the present invention comprises four components of In, Ga, Zn and O, wherein the atomicity percentage composition of the In is 18-21%, the atomicity percentage composition of the Ga is 18-21%, the atomicity percentage composition of the Zn is 8-10%, and the atomicity percentage composition of the O is 48-56%. According to the present invention, an annealing temperature is changed, so that on one hand, the internal defects of the thin film are reduced, the stability of the thin film is improved, on the other hand, the concentration of the oxygen vacancy is improved, and further a carrier concentration is improved, the resistance of a device is reduced, and the conductive capacity of the IGZO transparent thin film is improved, and further, the operation speed and the anti-interference capability of the device are improved to a certain extent.
Description
Technical field: [0001] The invention belongs to the field of LCD and LED displays, in particular to a H 2 Treated amorphous IGZO transparent oxide thin film and its preparation method. Background technique: [0002] Thin Film Transistor (TFT, Thin Film Transistor) is the core component of TFT-LCD and AMOLED active drive, which has a decisive impact on the improvement of display quality. [0003] figure 1 It is the basic structure and working principle diagram of TFT. The gate (Gate) is used as the input terminal, the drain electrode (Drain) is used as the output terminal, and the source electrode (Source) is grounded. After a sufficiently large gate voltage is applied, the carriers in the semiconductor move to the insulating layer (GateInsulator), and a conductive channel is formed near the interface between the active layer and the insulating layer in the insulating layer, and the transistor is turned on, which is called enhancement mode. A semiconductor that still con...
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IPC IPC(8): H01L21/324H01L21/336H01L29/10C23C14/08C23C14/35
CPCC23C14/08C23C14/35H01L21/324H01L29/1033H01L29/66742
Inventor 宋忠孝李雁淮李怡雪张丹
Owner 宁波云涂科技有限公司