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A reverse conduction type igbt device and its manufacturing method

A manufacturing method and device technology, which are used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect of improving performance and increasing stability

Active Publication Date: 2018-12-14
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of the reverse conduction IGBT device with this structure needs to be further improved

Method used

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  • A reverse conduction type igbt device and its manufacturing method
  • A reverse conduction type igbt device and its manufacturing method
  • A reverse conduction type igbt device and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050]This embodiment provides a method for fabricating a reverse conduction IGBT device, please refer to image 3 The schematic flow chart of the doping method for the semiconductor structure of this embodiment shown includes:

[0051] Step S201: Based on a semiconductor structure including an IGBT cell region and a fast recovery diode cell region separated from each other, a copper electrode layer is formed on the upper surface of the IGBT cell region;

[0052] Step S202: forming an injection barrier layer on the semiconductor structure on the region other than the IGBT cell region and the FRD cell region;

[0053] Step S203: Using the copper electrode layer as a barrier layer, performing ion implantation on the semiconductor structure, the ion implantation is used for minority carrier lifetime control of the FRD cellular region;

[0054] Step S204: removing the injection barrier layer;

[0055] Step S205: forming a metal electrode layer on the upper surface of the FRD cel...

Embodiment 2

[0084] This embodiment provides a reverse-conducting IGBT device fabricated by the method of the above embodiment, and the device includes a semiconductor structure, and the semiconductor structure includes an IGBT cell region and an FRD cell region surrounding the IGBT cell region. Among them, such as Figure 5 As shown, the upper surface of the IGBT cell region has a copper electrode layer 301, and the thickness of the copper metal layer is 5 μm˜30 μm. The upper surface of the FRD cell region has a metal electrode layer 302, and the metal electrode layer is electrically connected to the copper electrode layer on the upper surface of the IGBT cell region.

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Abstract

The present application provides a manufacturing method of a reverse conduction IGBT device, comprising: providing a semiconductor structure, the semiconductor structure includes IGBT cell regions separated from each other and a fast recovery diode cell region; forming copper on the upper surface of the IGBT cell region An electrode layer; using the copper electrode layer as a barrier layer, ion implantation is performed on the semiconductor structure; a metal electrode layer is formed on the upper surface of the fast recovery diode cell region, and the metal electrode layer is electrically connected to the IGBT element The copper electrode layer on the upper surface of the cell area. The minority carrier lifetime is controlled by ion implantation in the FRD cell region, which improves the performance of the device. The copper electrode layer of the IGBT cell area is used as the barrier layer in the ion implantation process to protect the semiconductor structure of the IGBT cell area from the impact of ion implantation, and realize the control of the minority carrier lifetime of the FRD cell area without affecting The minority carrier lifetime of the IGBT cell area further improves the performance of the device.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to an inverse conduction IGBT device and a manufacturing method thereof. Background technique [0002] With the continuous development of science and technology, more and more semiconductor devices are applied to people's work and daily life, which brings great convenience to people's work and daily life. [0003] The reverse conduction IGBT (Insulate Gate Bipolar Transistor, insulated gate bipolar transistor) is a new type of IGBT device, which integrates the IGBT cell structure and the FRD (Fast Recovery Diode, fast recovery diode) cell structure on the same chip In terms of performance, it has many advantages such as small size, high power density, low cost, and high reliability. The top view of a new type of reverse conduction IGBT device is as follows figure 1 As shown, it includes an independent IGBT part 101 and an independent FRD part 102, wherein the FRD ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L29/739H01L21/266
CPCH01L21/266H01L29/66333H01L29/7395H01L29/404H01L29/417H01L29/66348H01L29/7397H01L29/0619H01L29/0834H01L29/32H01L29/8611H01L29/495H01L29/739
Inventor 罗海辉肖海波刘国友黄建伟
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD