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A kind of cigs-based thin film solar cell and preparation method thereof

A solar cell and thin film technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as battery performance degradation, increase in battery series resistance, affecting film ohmic contact, etc., to reduce compounding, improve short-circuit current, and achieve The effect of large-area uniform film formation

Active Publication Date: 2017-12-08
厦门神科太阳能有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After high-temperature heat treatment, a thicker molybdenum selenide layer or molybdenum sulfide layer will be formed, which will affect the ohmic contact between the film layers, which will increase the series resistance of the battery and reduce the performance of the battery.

Method used

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  • A kind of cigs-based thin film solar cell and preparation method thereof
  • A kind of cigs-based thin film solar cell and preparation method thereof
  • A kind of cigs-based thin film solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A metal molybdenum electrode layer of 500nm is deposited by magnetron sputtering on the substrate of soda-lime glass; then a 30nm antimony-gallium alloy film layer is deposited by magnetron sputtering on the molybdenum back electrode layer, and the antimony-gallium alloy film layer contains 50at % antimony; then form a 2.0um thick p-type copper indium gallium selenide film layer with a chalcopyrite structure on the antimony gallium alloy film layer, and the heat treatment temperature for forming the p-type copper indium gallium selenide film layer is 520 ℃; Then adopt the chemical bath (CBD) method to deposit the CdS film layer of 45nm on the p-type copper indium gallium selenide film layer as the buffer layer; adopt magnetron sputtering to deposit the intrinsic ZnO film layer of 40nm on the buffer layer; A 600nm AZO film was deposited on the ZnO film by magnetron sputtering.

[0030] After the p-type copper indium gallium selenide film layer is formed, the soda lime gl...

Embodiment 2

[0032]A 500nm metal molybdenum electrode layer is deposited by magnetron sputtering on the substrate of soda-lime glass; then a 100nm antimony-gallium alloy film layer is deposited on the molybdenum back electrode layer by magnetron sputtering, and the antimony-gallium alloy film layer contains 65at % antimony; then form a 2.0um thick p-type copper indium gallium selenide film layer with a chalcopyrite structure on the antimony gallium alloy film layer, and the heat treatment temperature for forming the p-type copper indium gallium selenide film layer is 520 ℃; Then adopt the chemical bath (CBD) method to deposit the CdS film layer of 45nm on the p-type copper indium gallium selenide film layer as the buffer layer; adopt magnetron sputtering to deposit the intrinsic ZnO film layer of 40nm on the buffer layer; A 600nm AZO film was deposited on the ZnO film by magnetron sputtering.

[0033] After the p-type copper indium gallium selenide film layer is formed, the soda lime glass...

Embodiment 3

[0035] A 500nm metal molybdenum electrode layer is deposited by magnetron sputtering on the substrate of soda-lime glass; then a 40nm silver-antimony alloy film layer is deposited by magnetron sputtering on the molybdenum back electrode layer, and the silver-antimony alloy film layer contains 60at % silver; then form a 2.1um thick p-type copper indium gallium selenide film layer with a chalcopyrite structure on the silver antimony alloy film layer, and the heat treatment temperature for forming the p-type copper indium gallium selenide film layer is 520 ℃; Then adopt the chemical bath (CBD) method to deposit the CdS film layer of 40nm on the p-type copper indium gallium selenide film layer as the buffer layer; Adopt magnetron sputtering to deposit the intrinsic ZnO film layer of 50nm on the buffer layer; On the ZnO film layer, a 800nm ​​AZO film layer was deposited by magnetron sputtering.

[0036] After the p-type copper indium gallium selenide film layer is formed, the soda ...

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Abstract

The invention provides a CIGS-based film solar cell and preparation method thereof. The CIGS-based film solar cell comprises a substrate, a back electrode layer formed on the substrate, an alloy film layer formed on the back electrode layer, a p-type light absorption layer formed on the alloy film layer, a buffer layer formed on the p-type light absorption layer, and a transparent conductive layer formed on the buffer layer. The alloy film layer is formed by antimony and at least one selected from silver, platinum, chromium and gallium. The alloy film layer formed on the back electrode layer can be used to increase the size of crystalline particles of the p-type light absorption layer, increase the short-circuit current, and prevents the back electrode layer from corrosion of sulfur group elements; and thus, performance of the film solar cell is improved, and the manufacture cost is reduced.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, and more specifically, the invention provides a CIGS-based thin-film solar cell and a preparation method thereof. Background technique [0002] With the global warming, the deterioration of the ecological environment and the shortage of conventional energy, more and more countries have begun to vigorously develop solar energy utilization technology. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Copper indium gallium selenide (CIGS) is a direct bandgap P-type semiconductor material with an absorption coefficient as high as 10 5 / cm, 2um thick copper indium gallium selenide film can absorb more than 90% of sunlight. The band gap of the CIGS thin film is continuously adjustable fr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0392H01L31/0216H01L31/065H01L31/18
CPCH01L31/02167H01L31/03923H01L31/065H01L31/18Y02E10/541Y02P70/50
Inventor 李艺明邓国云
Owner 厦门神科太阳能有限公司
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