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Hard mask composition and method of patterning using the same

A composition and hard mask technology, applied in the photoengraving process of the pattern surface, photosensitive materials and instruments for opto-mechanical equipment, etc., can solve the problem of difficulty in providing clear and fine patterns, and ensure the etching resistance. , to ensure the effect of flattened features

Active Publication Date: 2018-03-27
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Today, depending on the small size of the pattern to be formed, it is difficult to provide fine patterns with clear outlines only by the above-mentioned typical photolithography techniques

Method used

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  • Hard mask composition and method of patterning using the same
  • Hard mask composition and method of patterning using the same
  • Hard mask composition and method of patterning using the same

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0111] Friedel-Craft Acylation (substituent introduction reaction)

[0112] 20.2 grams (0.1 moles) of terephthaloyl dichloride, 37.8 grams (0.1 moles) of 9,9-bis(4-methoxyphenyl)-9H-fluorene and 232 grams of 1,2-dichloroethane were placed in the flask middle. Next, 13.2 g (0.1 mol) of aluminum chloride was slowly added to the solution, and the mixture was stirred at room temperature. Then, samples were taken from the polymerized reactant by measuring the weight average molecular weight of the polymerized reactant every hour, and when the weight average molecular weight reached 1,200 to 1,500, the reaction was terminated. When the reaction was terminated, methanol was added thereto, and the monomer remaining after the precipitate generated therein was filtered was removed by using water and methanol.

[0113] Fluorination

[0114] 2.5 g (4.5 mmol) of the compound obtained from the substituent introduction reaction, 2.2 g (9 mmol) of 4-tert-butyl-2,6-dimethylphenylsulfur trif...

Synthetic example 2

[0118] Friedel-Crafts acylation (substituent introduction reaction)

[0119] 20.2 grams (0.1 moles) of terephthaloyl dichloride, 37.8 grams (0.1 moles) of 9,9-bis(4-methoxyphenyl)-9H-fluorene and 232 grams of 1,2-dichloroethane were placed in the flask middle. Next, 13.2 g (0.1 mol) of aluminum chloride was slowly added to the solution, and the mixture was stirred at room temperature. Then, samples were taken from the polymerized reactant by measuring the weight average molecular weight of the polymerized reactant every hour, and when the weight average molecular weight was 1,200 to 1,500, the reaction was terminated. When the reaction was terminated, monomers remaining after the precipitate generated therein was filtered were removed with water and methanol.

[0120] Arylation (introduction reaction of aromatic groups)

[0121] 2 g of 2-bromonaphthalene were dissolved in 10 ml of tetrahydrofuran, and the solution was cooled to -78°C. Next, 2.2 ml of n-BuLi (2.5 molar conc...

Synthetic example 3

[0125] Friedel-Crafts acylation (substituent introduction reaction)

[0126] According to the same method as Example 1, change to use 20.2 grams (0.1 moles) of phthaloyl dichloride, 11.6 grams (0.05 moles) of 4-methoxypyrene, 7.9 grams (0.05 moles) of methoxynaphthalene, 157 grams of 1 , 2-dichloroethane and 13.2 grams (0.1 mol) of aluminum chloride to synthesize the compound.

[0127] Fluorination

[0128] According to the same method as in Example 1, by using 2 g of the compound obtained from the substituent introduction reaction, 2.5 g (10 mmol) of 4-tert-butyl-2,6-dimethylphenylsulfur trifluoride, 3 ml HF-pyridine and 20 ml of dichloromethane obtained a compound represented by the following chemical formula C (polymer weight average molecular weight = 2,500).

[0129] [chemical formula C]

[0130]

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Abstract

The present invention provides a hard mask composition including a polymer and a solvent, and a method of forming a pattern, wherein the hard mask composition includes a polymer including a moiety represented by Chemical Formula 1 below. The hardmask composition of one embodiment of the present invention ensures both etch resistance and planarization features. [Chemical formula 1] In the chemical formula 1, A, B, R1 and R2 are the same as defined in the detailed description.

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2014-0089367 filed in the Korean Intellectual Property Office on Jul. 15, 2014, the entire contents of which are incorporated herein by reference. technical field [0003] The invention discloses a hard mask composition and a method for forming a pattern using the hard mask composition. Background technique [0004] Recently, the semiconductor industry has advanced to ultra-fine technology with patterns in the size of several nanometers to tens of nanometers. The ultra-fine technology mainly requires efficient photolithography. [0005] A typical photolithography technique includes: providing a material layer on a semiconductor substrate; coating a photoresist layer on the material layer; exposing and developing the photoresist layer to provide a photoresist pattern; and using the photoresist The pattern acts as a mask to etch the mate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/033H01L21/027
CPCH01L21/027H01L21/0332C08G61/02C09D165/00C08G2261/1424C08G2261/146C08G2261/148C08G2261/3424C08G2261/45C08G2261/72C08G2261/90H01L21/0212G03F7/42G03F7/70H01L21/02126H01L21/31116H01L21/02304H01L21/31144H01L21/0276G03F7/094G03F7/11G03F7/40C09D165/02
Inventor 南沇希金惠廷宋炫知
Owner SAMSUNG SDI CO LTD