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Seed crystal laying method and single crystal growth method through ingotting

A laying method and seed crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of prone to defect proliferation and reduce the minority carrier lifetime of silicon wafers, so as to inhibit the formation and proliferation of defects and reduce the defects. Producing the effect of sinking probability and large thermal stress

Inactive Publication Date: 2016-02-10
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the splicing top corner of the seed crystal is prone to defects and multiplies quickly, which greatly reduces the minority carrier lifetime of the silicon wafer.

Method used

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  • Seed crystal laying method and single crystal growth method through ingotting
  • Seed crystal laying method and single crystal growth method through ingotting
  • Seed crystal laying method and single crystal growth method through ingotting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A kind of laying method of seed crystal, is used for the casting of quasi-single crystal, is characterized in that, comprises the following steps:

[0022] A: Make 36 pieces of regular hexagonal single crystal silicon seed crystals with a side length of 91mm. The normal direction of the section of the single crystal silicon columnar seed crystal is the crystal direction, and the thickness is 20mm; figure 1 As shown; there is no fixed requirement for the crystal orientation of the side normal direction of the single crystal silicon columnar seed crystal;

[0023] B: Spread 36 pieces of seed crystals on the bottom of the crucible in 6 rows×6 columns, and the sides of the seed crystals are closely matched; figure 2 shown.

Embodiment 2

[0025] A method for growing an ingot single crystal, characterized in that it comprises the steps of:

[0026] S1: Manufacture 36 regular hexagonal silicon single crystal seed crystals with a side length of 91 mm, the cross-sectional normal direction of the single crystal silicon columnar seed crystal is the crystal direction, and the thickness is 20 mm; figure 1 As shown; there is no fixed requirement for the crystal orientation of the side normal direction of the single crystal silicon columnar seed crystal;

[0027] S2: Spread 36 pieces of seed crystals on the bottom of the crucible in 6 rows×6 columns, and the sides of the seed crystals are closely matched; figure 2 shown;

[0028] S3: 700kg of silicon material is put into the crucible, and after melting, crystal growth, annealing and cooling, a quasi-monocrystalline silicon ingot is grown. During the melting step, the seed crystal with a thickness of about 5mm at the bottom is kept from being melted;

[0029] S4: Afte...

Embodiment 3

[0032] A method for growing an ingot single crystal, characterized in that it comprises the steps of:

[0033] S1: Manufacture 30 regular hexagonal silicon single crystal seed crystals with a side length of 112 mm, the cross-sectional normal direction of the single crystal silicon columnar seed crystal is the crystal direction, and the thickness is 20 mm; figure 1 shown;

[0034] S2: Spread 30 seed crystals on the bottom of the crucible in 6 rows×5 columns, and the sides of the seed crystals are closely matched; image 3 shown;

[0035] S3: 920kg of silicon material is put into the crucible, and after melting, crystal growth, annealing and cooling, a quasi-single crystal silicon ingot is grown. During the melting step, the seed crystal with a thickness of about 3mm at the bottom is kept from being melted;

[0036] S4: After squaring the silicon ingot, cut it into quasi-monocrystalline silicon wafers with a side length of 156 mm and a thickness of 0.18 mm with a crystal orie...

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Abstract

The invention relates to a seed crystal laying method which comprises the following steps: A, manufacturing monocrystalline silicon columnar seed crystals with orthohexagonal sections, wherein the section normal direction of the monocrystalline silicon columnar seed crystals is <100> crystal orientation and the crystal orientation of the side surface normal direction is not required specifically; B, laying the side surfaces of the seed crystals on the bottom surface of a crucible fully in a close fit manner, wherein that the side surfaces of the seed crystals are in close fit is taken as a standard. According to the invention, the vertex angle seam of each monocrystalline silicon columnar seed crystal with the orthohexagonal section is reduced to three from four in comparison with that of the traditional quadrilateral seed crystal and is reduced by 25%, so that the probability of defects at the vertex angle is reduced greatly. In addition, the orthohexagonal seed crystals can splice into regular triple-junction crystal boundaries (the inclined angles are 120 degrees), so that greater heat stress can be borne, defect formation and increase caused by heat stress in a growth process can be restrained, the minor carrier lifetime of silicon wafer bodies is prolonged and the conversion efficiency of preparing the silicon wafers into battery pieces is improved. On the other hand, the invention provides a single crystal growth method through ingotting.

Description

technical field [0001] The invention relates to a seed crystal laying method and an ingot single crystal growth method, belonging to the technical field of solar cell production. Background technique [0002] At present, the raw materials used in solar cells are mainly crystalline silicon. Among them, monocrystalline silicon prepared by the Czochralski method has the advantage of high cell conversion rate, but its preparation process is complicated and the cost is relatively high. Polycrystalline silicon ingot has the advantages of easy operation and low cost, but its battery conversion efficiency is low. Quasi-single crystal silicon, which is between single crystal silicon and polycrystalline silicon, is an emerging silicon material. It has the advantages of both single crystal silicon and polycrystalline silicon. However, defects are prone to occur during its production process, which limits its industrial application and promote. [0003] Ingot single crystal technology...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/14C30B29/06
CPCC30B11/14C30B29/06
Inventor 葛文星付少永熊震
Owner TRINA SOLAR CO LTD
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