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Semiconductor light-emitting device

A light-emitting device and semiconductor technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of limited use, single light-emitting center wavelength, etc.

Inactive Publication Date: 2016-02-17
ASAHI KASEI KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In addition, LEDs have a single emission center wavelength, but in order to be used as various light sources, the use of a single wavelength is limited, so white light is required as an emission light source.

Method used

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  • Semiconductor light-emitting device
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  • Semiconductor light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0313] (Making a cylindrical mold (Making a mold for making a resin mold))

[0314] As the base material for the semiconductor light emitting element of the cylindrical mold, a cylindrical quartz glass roll having a diameter of 80 mm and a length of 50 mm was used. On the surface of this cylindrical quartz glass roll, a fine structure (fine concavo-convex structure) was formed by the following method and using a direct drawing photolithography method using a semiconductor pulse laser.

[0315] First, a resist layer is formed by sputtering on the fine structure of the quartz glass surface. The sputtering method uses CuO as a target (anti-corrosion layer) and is implemented with RF100W power. The film thickness of the resist layer after film formation was 20 nm. The cylindrical mold produced as described above was rotated at a linear speed of s=1.0 m / sec, and exposure was performed under the following conditions to produce cylindrical molds having two types of long periods.

[0316]...

Embodiment 2

[0407] The cylindrical mold produced in the same manner as in Example 1 was exposed under the following conditions while rotating at a linear velocity of s=1.0 m / sec.

[0408] Cylindrical mold C

[0409] Wavelength of semiconductor laser for exposure: 405nm

[0410] Exposure laser power: 3.5mW

[0411] Px in the X-axis direction: 260nm

[0412] The variation range of the pitch Px with respect to the X-axis direction δ2: 26nm

[0413] The long period unit in the X-axis direction of the variation range δ2 PxL1: 2.60μm

[0414] Py in the Y-axis direction: 300nm

[0415] The variation range of the pitch Py with respect to the Y-axis direction δ1: 30nm

[0416] Long period unit in the Y-axis direction of the fluctuation range δ1 PyL1: 2.60μm

[0417] Long period unit in the Y-axis direction of the fluctuation range δ1 PyL2: 1.30μm

[0418] The pitch Py in the Y-axis direction is determined as follows. Based on the Z-phase signal of the spindle motor, the time T required for one cycle is measured,...

Embodiment 3

[0448] The same semiconductor light emitting element as in Example 2 was placed in the package and electrically connected to the electrode pad via Au wires. Then, the package is filled with a wavelength conversion member in which a fluorescent material having the following main wavelength is mixed with silicone resin.

[0449] 530nmβ-SiAlON: Eu

[0450] 580nmCa-α-SiAlON: Eu

[0451] 650nmCaAlSiN 3 : Eu

[0452] Table 4 shows the emission output ratio of Example 3 at 20 mA. In Example 3, similar to Example 1 and Example 2, light emission with glare peculiar to diffraction was not observed, and light emission angle dependence was hardly observed.

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Abstract

A semiconductor light-emitting device constituted by: a semiconductor light-emitting element (100) emitting a first light, having a layered semiconductor layer (110) constituted by layering at least two or more semiconductor layers (103) (105) and a light-emitting layer (104); and a wavelength conversion member covering at least a portion of the semiconductor light-emitting element (100), absorbing at least a portion of the first light and emitting a second light having a wavelength different from the first light. The device is characterized in that, as a constitutive element on any of the main planes constituting the semiconductor light-emitting element (100), the semiconductor light-emitting element (100) is provided with a microstructural layer containing dots constituted from a plurality of depressions or protrusions extending outward from the plane, the microstructural layer constituting a two-dimensional photonic crystal (102) defined by any of at least the pitch between the dots, the dot diameter or the dot height, the two-dimensional photonic crystal (102) having at least two or more periods of 1 [mu]m or greater each.

Description

Technical field [0001] The present invention relates to a semiconductor light emitting device composed of a semiconductor light emitting element and a wavelength conversion member. Background technique [0002] Compared with conventional light-emitting devices such as fluorescent lamps and incandescent lamps, light-emitting diodes (LEDs), which are semiconductor light-emitting elements using a semiconductor layer, have the characteristics of small size, high power efficiency, and fast switching response. Therefore, it has many advantages such as anti-vibration and long equipment life. [0003] In addition, the emission center wavelength of an LED is single, but in order to be used as a variety of light sources, its use is limited if it is a single wavelength, so white light is required as an emission light source. [0004] For example, Patent Document 1 discloses an invention related to a semiconductor light-emitting device that combines a blue LED and a fluorescent material that ab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/50H01L33/58
CPCH01L33/22H01L2933/0083H01L33/504H01L33/24H01L33/50
Inventor 山口布士人白仓奈央
Owner ASAHI KASEI KK
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