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A kind of mems supercapacitor and preparation method thereof based on high dielectric constant film

A high dielectric constant, supercapacitor technology, used in the manufacture of hybrid/electric double layer capacitors, electrolytic capacitors, capacitors, etc., can solve the problems of low energy density of electrostatic supercapacitors, achieve improved performance, good temperature stability, The effect of increasing the specific surface area

Active Publication Date: 2018-02-02
TAIYUAN UNIV OF TECH
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  • Abstract
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Problems solved by technology

[0003] In order to solve the problem of low energy density of electrostatic supercapacitors, the present invention provides a MEMS supercapacitor based on a high dielectric constant film and a preparation method thereof

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  • A kind of mems supercapacitor and preparation method thereof based on high dielectric constant film
  • A kind of mems supercapacitor and preparation method thereof based on high dielectric constant film
  • A kind of mems supercapacitor and preparation method thereof based on high dielectric constant film

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Embodiment Construction

[0038] A MEMS supercapacitor based on a high dielectric constant film, including a silicon wafer, a three-dimensional groove array 4 is etched on the silicon wafer, heavily doped phosphorus elements are used as the lower electrode layer 5 on the silicon wafer with the etched structure, and the heavily doped A CCTO-0.1MTO dielectric thin film layer 6 is formed on the substrate by liquid phase deposition, and a metal gold layer is sputtered on the dielectric thin film layer 6 as the upper electrode layer 7, and the lower electrode layer 5 is partially exposed outside the upper electrode layer 7, three-dimensional The micropores of the groove structure 4 are filled with copper conductive paste 8 .

[0039] The above-mentioned preparation method based on the MEMS supercapacitor of high dielectric constant film, comprises the steps:

[0040]S1: Mix 0.06mol of Cu(NO3)2·3H2O, 0.02mol of Ca(CH3COO)2·H2O, 0.08mol of Ti(OC4H9)4 and 0.002mol of Mg(CH3COO)2·4H2O in ethylene glycol , drop...

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Abstract

The invention belongs to the technical scope of micro-energy manufacturing, and specifically relates to a MEMS supercapacitor based on a high dielectric constant film and a preparation method thereof. Supercapacitors, including silicon wafers, etched three-dimensional groove arrays on the silicon wafers, heavily doped phosphorus elements on the silicon wafers as the lower electrode layer, deposited a dielectric thin film layer on the heavily doped substrate, and then sputtered metal on the dielectric thin film layer The gold layer is used as an upper electrode layer, and the micropores of the three-dimensional groove structure are filled with copper conductive paste. The invention first adopts a high dielectric constant film to replace the traditional dielectric layer, and secondly, adopts a silicon substrate etched with a three-dimensional groove array, which significantly increases the specific surface area of ​​the electrode and improves the capacitance characteristics of the supercapacitor. The dielectric thin film has great dielectric properties, relatively low dielectric loss, and very good temperature stability, and can be uniformly deposited on the substrate by the LPD method. Wet etching silicon wafer technology can control the aspect ratio of the groove, and the specific surface area of ​​the electrode is greatly increased by designing the appropriate groove width and height.

Description

technical field [0001] The invention belongs to the technical scope of micro-energy manufacturing, and relates to a method for preparing a MEMS supercapacitor with high energy density applied in a microsystem, specifically a MEMS supercapacitor based on a high dielectric constant film and a preparation method thereof. technical background [0002] Micro Electro Mechanical System (MEMS), referred to as MEMS, is a new type of interdisciplinary technology developed in recent years. It integrates functions such as microstructure, microsensor, microactuator, micropower supply and signal processing control. , has the advantages of low cost, small size, strong self-control, and high reliability. It is a cutting-edge technology in the 21st century based on micro / nano technology. Among them, the micro power supply is the key basic component in the MEMS, and the miniaturization and integration of the power supply is the fundamental guarantee for various MEMS devices and systems to wor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/00H01G11/22H01G11/86H01G11/84B81C1/00B81B7/02
CPCY02E60/13
Inventor 李刚赵清华史健芳高雅段倩倩乔学工
Owner TAIYUAN UNIV OF TECH
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