Forward-direction triple junction solar cell based on p-type doped quantum well structure

A technology of solar cells and quantum wells, applied in the field of solar cells, to achieve the effects of increasing short-circuit current density, promoting effective separation, and reducing dark current

Inactive Publication Date: 2016-02-24
SHANGHAI INST OF SPACE POWER SOURCES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a forward triple-junction solar cell based on a p-type doped quantum well structure to solve the problem of how to further adjust the matching current of the top middle cell

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  • Forward-direction triple junction solar cell based on p-type doped quantum well structure

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Embodiment Construction

[0017] In the following, a forward triple junction solar cell based on a p-type doped quantum well structure proposed by the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and all use imprecise ratios, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0018] The core idea of ​​the present invention is that the present invention provides a forward triple junction solar cell based on a p-type doped quantum well structure, which suppresses the quantum well by deliberately p-type doping in the quantum well and / or the surrounding spacer layer The non-radiative recombination of the structure promotes the effective separation of photogenerated carrie...

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Abstract

The invention provides a forward-direction triple junction solar cell based on a p-type doped quantum well structure, and the solar cell comprises a quantum well layer and a spacing layer, wherein the quantum well layer and / or the spacing layer are / is of a p-type doped type. According to the invention, the quantum well layer and / or the surrounding spacing layer are / is intentionally of the p-type doped type, thereby inhibiting the nonradiative recombination of the quantum well structure, facilitating the effective separation of photon-generated carriers, achieving the purposes of reducing a low dark current and improving a short circuit current, and finally obtaining a big short circuit current triple junction solar cell. The p-type doped quantum well structure can improve the response of carriers to a band with the wavelength being greater than 880nm, and improves the short circuit current density of the cell.

Description

Technical field [0001] The invention relates to the technical field of solar cells, in particular to a forward triple junction solar cell based on a p-type doped quantum well structure. Background technique [0002] Solar cells can directly convert solar energy into electricity, which can greatly reduce people's dependence on coal, oil and natural gas in production and life. It is the most effective form of clean energy. The conversion efficiency of III-V compound semiconductor solar cells is the highest among the current material systems. It also has the advantages of good high temperature resistance, strong radiation resistance, and good temperature characteristics. It is recognized as a new generation of high-performance long-life space The main power supply has been widely used in the aerospace field. With the continuous progress of compound semiconductor growth technology (such as MOCVD), the efficiency of III-V solar cells has been greatly improved, and the efficiency of ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/0304H01L31/0687H01L31/0256
CPCY02E10/544H01L31/035236H01L31/0256H01L31/0304H01L31/03042H01L31/0687
Inventor 周大勇陈开建施祥蕾孙利杰贾巍
Owner SHANGHAI INST OF SPACE POWER SOURCES
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