A kind of preparation method and application of hexafluoropropane-based PMO thin film

Abstract

The invention relates to a preparation method and application of a hexafluoropropylene-propyl PMO thin film. The preparation method includes the following steps that firstly, a hexafluoropropylene-propyl precursor molecular solution is prepared; under protection of dry nitrogen, an acetone solution of 2,2-bis(3-amino-4-hydroxyphenyl) hexafluoropropane is added into an acetone solution of isocyanat-3-(triethoxysilyl) propyl ester, a reaction is performed in an ice bath for 1.5-3 h, heating is performed till room temperature is achieved and preserved for 2-5 h, and the hexafluoropropylene-propyl precursor molecular solution is prepared; secondly, a film coating solution is prepared, wherein a template agent, a solvent and dilute hydrochloric acid are added into the precursor molecular solution, and the adding quantity of the template agent is 0-100%; thirdly, the PMO thin film is prepared; the surface of a substrate is coated with the film coating solution, the solution is cured, and the PMO thin film is prepared. According to the preparation method, by increasing the molecular pore volume, reducing molecular polarity and improving the crosslinking degree, the dielectric constant of the novel PMO thin film is reduced, and mechanical properties are guaranteed.

Description

technical field [0001] The invention relates to a method for preparing an ordered mesoporous organic silicon film, in particular to a method for preparing a hexafluoropropane-based PMO film, and also relates to the application of the ordered mesoporous organic silicon film prepared by the preparation method. Background technique [0002] In order to reduce the dielectric constant of the material, it has become a widely used experimental method to make porous dielectric materials by introducing air with a very low dielectric constant into the pores of the material. However, the introduction of pores also reduces the stability and thermal conductivity of the material. Therefore, it is necessary to establish a suitable model theoretically to guide experiments and predict the impact of porosity on thermal and electrical properties. [0003] The preparation of porous low dielectric materials usually includes sol-gel method, in-situ grafting method and template method. Among them...

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Problems solved by technology

[0008] The second technical problem to be solved by the present invention is to provide a kind of application of PMO thin film in VLSI, the specific PMO thin film used has ultra-low dielectric constant, thereby can solve the signal problem caused by high dielectric constant. Problems such as transmission delay, noise interference enhancement, power loss, etc.

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