Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ge-As-Se infrared glass with anti-reflection film and preparation method thereof

A technology of infrared glass and anti-reflection film, which is applied in the direction of optical components, optics, instruments, etc., can solve the problems of film layer shedding, poor physical and chemical properties, and more film materials, so as to reduce residual reflectivity, good stress matching, and improve transparency. over performance effect

Active Publication Date: 2016-03-09
CHINA BUILDING MATERIALS ACAD
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But this film system exists to adopt too much film material, the shortcomings such as number of layers and thickness are large; In addition, GASIR1 infrared glass is a Ge-As-Se system, which is different from germanium antimony selenium infrared glass in physical and chemical properties, and the film system structure and preparation method are different. Suitable for germanium antimony selenium infrared glass
Compared with infrared crystal materials such as germanium, germanium antimony selenium infrared glass has a low transition temperature, high brittleness, and poor physical and chemical properties. The film layer prepared by conventional film layer preparation technology is prone to problems such as film layer peeling
The physical and chemical properties of germanium antimony selenium infrared glass and Ge-As-Se system and its elemental germanium are very different. Report on Antireflection of Selenium Infrared Glass

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ge-As-Se infrared glass with anti-reflection film and preparation method thereof
  • Ge-As-Se infrared glass with anti-reflection film and preparation method thereof
  • Ge-As-Se infrared glass with anti-reflection film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The preparation method of the germanium antimony selenium infrared glass with antireflection coating comprises the following steps:

[0038] (1) Cleaning and preheating: ultrasonically clean the infrared glass substrate with a mixture of acetone and alcohol ether, the cleaning time is 15 minutes each, and finally, put the substrate in an oven for drying; after drying, quickly clamp the substrate Place in a vacuum chamber and draw a vacuum. Vacuum up to 5.0×10 -3 pa, adjust the output voltage of the baking lamp, the heating rate is: room temperature -60°C, 30min, 60°C-100°C, 30min, after reaching the temperature, keep warm for 1.2h.

[0039] What needs to be explained here is that germanium antimony selenium infrared glass is a brittle material, and gradient heating can prevent glass breakage caused by drastic temperature changes.

[0040] (2) Ion-assisted cleaning, turn on the ion source, fill the volume of argon gas with 35 sccm, and the pressure of the vacuum chambe...

Embodiment 2

[0053] 分别采用丙酮和酒精乙醚混和液对红外玻璃基底进行超声波清洗,清洗时间分别为各13min和16min,最后,将基底放入烘箱烘干。

[0054] 烘干完成后,快速装夹基底放入真空室,抽取真空;真空达到8.0×10 -3 pa,调整烘烤灯输出电压,升温速率为:室温-60℃,30min,60℃-120℃,40min;到温后,保温1.5小时。

[0055] 充入氩气40sccm,真空室压强为8.0×10 -3 pa,开启离子源,调整离子源参数为:阳极电压100V,阳极电流为2A,工件盘转速为10rpm。

[0056] Plating the first YbF 3 膜,蒸镀时真空室压强为1.0×10 -2 pa,沉积速率为0.15nm / s,采用晶振仪控制沉积速率,沉积光学厚度为153nm,采用光学膜厚仪控制膜层光学厚度。

[0057] 镀制第一ZnS膜,蒸镀时真空室压强为9.0×10 -3 pa,沉积速率为1.5nm / s,沉积光学厚度为1697nm,采用晶振仪控制沉积速率,采用光学膜厚仪控制膜层光学厚度。

[0058] Plating a second YbF 3 膜,蒸镀时真空室压强为1.0× -2 pa,沉积速率为0.15nm / s,沉积光学厚度为1646nm,采用晶振仪控制沉积速率,采用光学膜厚仪控制膜层光学厚度。

[0059] 镀制第二ZnS膜,蒸镀时真空室压强为9.0×10 -3 pa,沉积速率为1.5nm / s,沉积光学厚度为358nm,采用晶振仪控制沉积速率,采用光学膜厚仪控制膜层光学厚度。

[0060] 镀制完成后,按以下降温速率降温:120℃-60℃,55min,60℃-室温,25min,取出镀膜红外玻璃。

[0061] 这里需要说明的是:本实施例利用硫化锌与氟化镱应力类型相反,并控制单层和总厚度大小,实现了良好的应力匹配。

[0062] 膜层与基底,膜层与膜层间附着力良好;剩余反射率低,满足光学系统对红外玻璃的透过要求;镀膜时采用梯度升温和降温,有效避免了红外玻璃因温度变化大导致的易破裂等问题;采用低能高密度离子辅助沉积方式,避免了镀膜过程中的温升,提高了膜层的性能。

[0063] 本实施制备的具有的膜系结构为2种膜料组成的4层结构;第1层为YbF 3 ,光学厚...

Embodiment 3

[0065] 分别采用丙酮和酒精乙醚混和液对红外玻璃基底进行超声波清洗,清洗时间分别为各18min和12min,最后,将基底放入烘箱烘干。

[0066] 烘干完成后,快速装夹基底放入真空室,抽取真空;真空达到1.0×10 -2 pa,调整烘烤灯输出电压,升温速率为:室温-60℃,30min,60℃-120℃,40min;到温后,保温1.5小时。

[0067] 充入氩气40sccm,真空室压强为2.0×10 -2 pa,开启离子源,调整离子源参数为:阳极电压150V,阳极电流为1A,工件盘转速为20rpm。

[0068] Plating the first YbF 3 膜,蒸镀时真空室压强为2.0×10 -2 pa,沉积速率为0.15nm / s,采用晶振仪控制沉积速率,沉积光学厚度为193nm,采用光学膜厚仪控制膜层光学厚度。

[0069] 镀制第一ZnS膜,蒸镀时真空室压强为2.0×10 -2 pa,沉积速率为3nm / s,沉积光学厚度为1937nm,采用晶振仪控制沉积速率,采用光学膜厚仪控制膜层光学厚度。

[0070] Plating a second YbF 3 膜,蒸镀时真空室压强为2.0× -2 pa,沉积速率为0.3nm / s,沉积光学厚度为1486nm,采用晶振仪控制沉积速率,采用光学膜厚仪控制膜层光学厚度。

[0071] 镀制第二ZnS膜,蒸镀时真空室压强为2.0×10 -2 pa,沉积速率为3nm / s,沉积光学厚度为308nm,采用晶振仪控制沉积速率,采用光学膜厚仪控制膜层光学厚度。

[0072] 镀制完成后,按以下降温速率降温:120℃-60℃,55min,60℃-室温,25min,取出镀膜红外玻璃。

[0073] 膜层与基底,膜层与膜层间附着力良好;剩余反射率低,满足光学系统对红外玻璃的透过要求;镀膜时采用梯度升温和降温,有效避免了红外玻璃因温度变化大导致的易破裂等问题;采用低能高密度离子辅助沉积方式,避免了镀膜过程中的温升,提高了膜层的性能。

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Optical thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses Ge-As-Se infrared glass with an anti-reflection film and a preparation method thereof. The Ge-As-Se infrared glass with the anti-reflection film comprises a Ge-As-Se infrared glass base layer, the Ge-As-Se infrared glass base layer is composed of 12% of Ge, 28% of As and 60% of Se by weight, and a first ytterbium fluoride layer, a first zinc sulfide layer, a second ytterbium fluoride layer and a second zinc sulfide layer are deposited on the Ge-As-Se infrared glass base layer successively. The Ge-As-Se infrared glass of the invention can effectively prevent the anti-reflection film from falloff, and the reflectivity of the infrared glass is reduced.

Description

technical field [0001] The invention relates to the field of glass processing, in particular to a germanium-antimony-selenide infrared glass with an antireflection film and a preparation method thereof. Background technique [0002] Germanium antimony selenium infrared glass is a class of infrared optical materials with excellent performance, but its high brittleness and high residual reflectivity on the surface cannot be used directly. [0003] The commonly used means of reducing the reflectivity of glass material at present is to coat anti-reflection film on the surface of glass material, and patent CN104459835A has introduced a kind of infrared glass GASIR1 anti-reflection film, and it adopts 4 kinds of film materials, and the number of film layers is 13 ± 2 layers, total The thickness reaches 4000±200nm, and the residual reflectance of the surface can be reduced to less than 1% after design. [0004] But this film system exists to adopt too much film material, the short...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B1/115
CPCG02B1/115
Inventor 金扬利祖成奎赵华刘永华韩滨赵慧峰王衍行陈江何坤
Owner CHINA BUILDING MATERIALS ACAD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com