The present invention relates to an
intermetallic dielectric layer, a manufacturing method thereof and a
semiconductor device. The manufacturing method of the
intermetallic dielectric layer comprises: obtaining a base structure formed with a
metal structure, the surface of the
metal structure being covered by an SRO layer; forming a
silicon nitride layer with compressive stress on the surface of the SRO layer on the side wall of the
metal structure; filling
fluorine-containing
silicon glass so that it covers the metal structure, the SRO layer and the
silicon nitride layer as an
intermetallic dielectric layer. The present invention sets a
silicon nitride layer between the SRO layer and the
fluorine-containing silicon glass. Since the
silicon nitride layer has compressive stress, it can suppress the microscopic deformation of the metal structure caused by the thermal process (the expansion coefficient of the metal structure is larger than the expansion coefficient of the
fluorine-containing silicon glass, so the microscopic deformation of the metal structure is large during the temperature change process). Furthermore, since the strength of
silicon nitride is relatively large, the newly added silicon
nitride layer can prevent the metal structure from being deformed and causing the SRO layer to break, and prevent the subsequent free fluorine ions in the fluorine-containing silicon glass from entering and corroding the metal structure to cause voids.