Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of preparation method of high square resistance doped crystalline silicon layer for crystalline silicon-based solar cell

A technology for solar cells and crystalline silicon, applied in the field of solar cells, can solve the problems of difficulty in promotion, high technical difficulty and cost of preparation technology, and achieve the effect of improving conversion efficiency

Active Publication Date: 2017-11-03
NANCHANG UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation technology required after adopting the new device structure still has high technical difficulty and cost, and it is difficult to promote

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Taking the p-type polysilicon substrate as an example, the present invention will be further described by describing specific implementation cases in combination with the content of the present invention, but the scope of protection of the present invention should not be limited by this.

[0016] After the p-type polycrystalline silicon wafer of 156mm*156mm is cleaned by conventional texturing, the solar cell is prepared according to the following process route:

[0017] 1) PECVD deposits a layer with a thickness of 100nm and a doping concentration of 5*10 18 cm -3 Phosphorus-doped amorphous silicon thin film

[0018] 2) The silicon wafer after the deposition of the diffusion source is subjected to Ar / O with an oxygen content of 20% in a roller continuous diffusion furnace. 2 Mixed gas protection atmosphere heat treatment, set the T-t relationship as, 2min rise to 850°C, keep warm for 30min, then drop to 100°C for 5min and take out.

[0019] 3) HF removes the oxide l...

Embodiment 2

[0022] Taking the p-type monocrystalline silicon wafer substrate as an example, the present invention will be further described by describing specific implementation cases in combination with the content of the present invention, but the scope of protection of the present invention should not be limited by this.

[0023] After the p-type monocrystalline silicon wafer of 156mm*156mm is cleaned by conventional texturing, the solar cell is prepared according to the following process route:

[0024] 1) PECVD deposits a layer with a thickness of 100nm and a doping concentration of 2*10 19 cm -3 Phosphorus-doped amorphous silicon thin film; then PECVD method is used to deposit a layer with a thickness of 100nm and a doping concentration of 5*10 19 cm -3 boron-doped amorphous silicon thin film

[0025] 2) The silicon wafer after the deposition of the diffusion source is heat-treated in a roller-type continuous diffusion furnace in a clean air atmosphere. The T-t relationship is se...

Embodiment 3

[0029] Taking the n-type monocrystalline silicon substrate as an example, the present invention will be further described by describing specific implementation cases in combination with the content of the present invention, but this should not limit the protection scope of the present invention.

[0030] After the n-type monocrystalline silicon wafer of 125mm*125mm is cleaned by conventional texturing, the solar cell is prepared according to the following process route:

[0031] 1) PECVD deposits a layer with a thickness of 150nm and a doping concentration of 1*10 20 cm -3 Boron-doped amorphous silicon thin film; then PECVD method is used to deposit a layer with a thickness of 100nm and a doping concentration of 5*10 19 cm -3 Phosphorus-doped amorphous silicon thin film

[0032] 2) The silicon wafer after deposition of the diffusion source is heat treated in a clean air atmosphere in a roller continuous diffusion furnace. The T-t relationship is set as 2min to 900°C, heat p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method for a high sheet resistance doped crystalline silicon layer used for a crystalline silicon-based solar cell. The basic process steps are that a layer of heavily doped silicon-based film is deposited to act as a diffusion source by adopting a low temperature chemical vapor deposition method, then atmosphere protection thermal treatment is performed by adopting a continuous diffusion furnace, and excess materials of the surface are removed so that the required high sheet resistance crystalline silicon layer is obtained. With application of the technical route, a p-type or n-type crystalline silicon layer which has uniformity of + / -5%, repeatability of being within + / -2% and sheet resistance of being more than 98ohm / square and is suitable for acting as an emission electrode of a back field for a p-type and n-type crystalline silicon-based solar cell can be obtained. Compared with existing technologies, conversion efficiency of the crystalline silicon solar cell can be enhanced more than 0.5%.

Description

technical field [0001] The invention relates to a method for preparing a high-resistivity doped crystalline silicon layer for crystalline silicon-based solar cells, and belongs to the field of solar cells. It involves the structure and preparation method of solar cells, claiming the priority of the earlier application 201410699079.1 submitted on November 28, 2014. Background technique [0002] Solar photovoltaic power generation is one of the most important renewable and clean energy utilization methods for human beings. Among them, crystalline silicon solar cells have attracted widespread attention due to their abundant raw material sources and relatively mature preparation technologies, and are the mainstream product category of solar cells. [0003] At present, mainstream crystalline silicon solar cells, including monocrystalline silicon wafers and polycrystalline silicon wafers, need to form a layer of crystalline silicon thin film layer on the front surface and back su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 黄海宾周浪岳之浩
Owner NANCHANG UNIV