Method for preparing stannic oxide-based thin film material

Abstract

The invention discloses a method for preparing a stannic oxide-based thin film material. The method includes the following steps that ethylene glycol monomethyl ether, stannous chloride dihydrate and ethyl alcohol are mixed, stirred and heated under the 60-80 DEG C condition for 15-30min, and aging is performed at the argon atmosphere for one to two days after heating is finished to obtain sol; the sol is dropwise added on a substrate for spin coating and whirl coating to obtain a thin film sample; the thin film sample is transferred into a vacuum tubular furnace which is vacuumized and where argon is fed to be heated and dried; and the formaldehyde atmosphere is formed in the vacuum tubular furnace, the temperature is increased at the speed of 1-3 DEG C / minute until the annealing temperature is 600-650 DEG C, then heat preservation is performed for 10-30min, natural cooling is conducted after annealing is finished, and the preparation of the p-type stannic oxide-based thin film material is completed. Formaldehyde steam is introduced to serve as the protective atmosphere so as to prevent Sn2+ from being oxidized into Sn4+, and Sn0 is introduced so as to increase the mobility of a thin film. The Hall mobility of the thin film material prepared through the method is as high as 8.6cm<2>V<1>S<1>.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin films, and in particular relates to a preparation method of a tin oxide-based thin film material. Background technique [0002] With the rapid development of information display technology, oxide semiconductors have received extensive attention in many application fields. In the past few decades, n-type oxide semiconductors have achieved great success in material preparation and device applications, but the development of p-type oxide semiconductors is still lagging behind. [0003] A bipolar thin film transistor composed of an n-type oxide thin film transistor and a p-type oxide thin film transistor is the basis for realizing transparent electronic devices. In addition, the p-type oxide thin film transistor is more conducive to driving the high aperture ratio pixel unit of the organic light emitting diode. At the same time, the combination of p-type oxide thin film transistors and fl...

AI Technical Summary

Problems solved by technology

However, from the perspective of preparation methods, researchers almost use physical methods such as magnetron sputtering, and the preparation environment is high vacuum, and the cost of thin film preparation is high.

Images