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Method for preparing copper-indium sulfide optoelectronic thin film by adopting sulfate system two-step method

A photoelectric thin film, copper indium sulfide technology, applied in photovoltaic power generation, circuits, electrical components, etc., to achieve the effect of low production cost, high production efficiency, and low equipment requirements

Inactive Publication Date: 2016-03-23
SHANDONG JIANZHU UNIV
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Problems solved by technology

[0026] In order to solve the existing problems in the preparation of copper indium sulfur photoelectric thin films, the present invention invented a two-step method for preparing copper indium sulfur photoelectric thin films in a sulfate system

Method used

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Experimental program
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Embodiment 1

[0036] a. Cleaning of the tin dioxide conductive glass substrate: clean the glass substrate as described above, and the size of the substrate is 20mm×20mm.

[0037] b. Divide 1.0 parts of C 6 h 5 Na 3 o 7 2H 2 O, 6.8 parts of CuSO 4 ·5H 2 O, 7.0 In 2 (SO 4 ) 3 , 65.0 parts of Na 2 S 2 o 3 ·5H 2 O was put into 2700.0 parts of distilled water to dissolve the substances in the solution.

[0038] c. Pour the above electrodeposition solution into a three-electrode device, use a saturated calomel electrode as a reference electrode, a platinum electrode as an auxiliary electrode, and tin dioxide conductive glass as a research electrode, and use a transistor potentiostat at a deposition potential of -1.0 Thin films were deposited at room temperature at V for 30 min, and dried naturally to obtain precursor thin film samples.

[0039] d. Place the precursor thin film sample on the support, add sublimated sulfur powder into the hydrazine hydrate, the precursor thin film sam...

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Abstract

The invention provides a method for preparing a copper-indium sulfide optoelectronic thin film by adopting a sulfate system two-step method, and belongs to the technical field of preparation of the optoelectronic thin films for solar cells. The method comprises the following steps: firstly cleaning a stannic oxide conductive glass substrate, then putting C6H5Na3O7.2H2O, CuSO4.5H2O, In2(SO4)3, and Na2S2O3.5H2O into distilled water, and adopting an electrodeposition method to obtain a precursor thin film on the conductive glass substrate; naturally drying, and putting the precursor thin film into a tubular furnace added with hydrazine hydrate, enabling the precursor thin film not to be in contact with the hydrazine hydrate, wherein the hydrazine hydrate is added with sublimed sulfur powder; heating the precursor thin film in the sealed tubular furnace to enable the precursor thin film to be vulcanized, and finally taking out the sample and drying to obtain the copper-indium sulfide optoelectronic thin film. The method does not require a high-vacuum condition, has low requirements on the instrument and equipment, and is low in production cost, high in production efficiency and easy to operate; the obtained copper-indium sulfide optoelectronic thin film is relatively high in continuity and uniformity; and the main phase is the CuInS2 phase, so that the low-cost and large-scale industrial production can be realized.

Description

technical field [0001] The invention belongs to the technical field of photoelectric film preparation for solar cells, and in particular relates to a two-step method for preparing copper indium sulfur photoelectric film in a sulfate system. Background technique [0002] With the development of society and economy, energy shortage and pollution caused by energy consumption have become prominent problems in the development of domestic society. Coal and oil are non-renewable resources. Therefore, the development and utilization of clean and renewable energy is very important for protecting the environment and ensuring economic sustainability Both sustainable development and building a harmonious society are of great significance. Photovoltaic power generation has the advantages of safety, reliability, no noise, no pollution, less constraints, low failure rate, and easy maintenance. Solar energy, a clean, safe and environmentally friendly renewable energy, can be used. Therefo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032
CPCH01L31/0322H01L31/18Y02E10/541Y02P70/50
Inventor 李静刘科高刘慧苏沫林石磊
Owner SHANDONG JIANZHU UNIV
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