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Fan-out package method of embedded silicon substrate

A packaging method and a fan-out technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems of poor chip-to-panel bonding accuracy, chip position movement, and difficult alignment, etc., to achieve Effects of increasing operability and precision, improving package quality and efficiency, and reducing package cost

Active Publication Date: 2016-03-30
HUATIAN TECH KUNSHAN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of panel-level fan-out packaging, there are technical problems of large line width and line spacing of metal wiring
At present, the line width of the mainstream process is 20 microns. If the line width is reduced, the yield rate will decrease and the cost will increase.
In addition, due to the large area of ​​the panel, the bonding accuracy of the chip to the panel will deteriorate, the position of the chip will shift during embedding and bonding, and the warpage of the panel will also cause deviation during exposure.
Therefore, for chips with fine-pitch pads, such as pitches less than 90 microns, it is difficult to align
Coupled with the limitation of wiring width, panel-level fan-out packaging has not yet been mass-produced
[0004] Although wafer-level fan-out packaging technology has the advantages of small metal line width / spacing and precise wiring, it cannot achieve the packaging efficiency of panel-level fan-out packaging and its corresponding low-cost goal

Method used

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  • Fan-out package method of embedded silicon substrate
  • Fan-out package method of embedded silicon substrate
  • Fan-out package method of embedded silicon substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A fan-out packaging method embedded in a silicon substrate, comprising the steps of:

[0043] Step 1. See figure 1 , provide a silicon substrate wafer 1 with several grooves 101 made on the upper surface, at least one chip 2 is bonded in the groove, and the depth of the groove is equivalent to the thickness of the chip, and the soldering of the chip The disk surface 201 faces outward, that is, the bonding pad of the chip is close to the upper surface of the silicon base wafer. In order to facilitate the placement of the chip, the groove is slightly larger than the size of the chip, and glue or film needs to be used to fill the gap between the chip and the groove to increase the stability of the chip and ensure the insulation performance.

[0044] Preferably, the chip is bonded to the groove by glue or dry film 3 . More preferably, the glue or dry film is a non-conductive polymer glue or film, which bonds the chip and the bottom of the groove to ensure that the positio...

Embodiment 2

[0066] Such as figure 2 As shown, this embodiment 2 includes all the technical features of embodiment 1, the difference is that two chips 2 are embedded in a groove on the upper surface of the silicon substrate wafer, and the size and function of the two chips can be the same or the same. different. This embodiment can achieve the purpose of expanding the functions of the package.

[0067] To sum up, the present invention provides a fan-out packaging method embedded in a silicon substrate. First, the chip is mounted using the fan-out wafer-level packaging technology, that is, the chip is embedded on the silicon substrate wafer for packaging, and then the fan-out During the production process, a number of silicon substrate wafers that have completed chip mounting are pasted on a panel for overall operation. Finally, the silicon substrate wafers are peeled off from the panel for bump preparation or solder ball planting, and silicon substrate is cut. Wafer, forming a fan-out p...

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PUM

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Abstract

The invention discloses a fan-out package method of an embedded silicon substrate. The fan-out package method comprises the following steps of firstly, embedding a chip onto a silicon substrate wafer in a wafer level; secondly, laminating a plurality of silicon substrate wafers on a panel for panel level package during a fan out process; and finally, fabricating salient points or planting welding balls in the wafer level. According to the fan-out package method, the chip is embedded onto the silicon substrate wafer and then panel level package is carried out, the maneuverability and the accuracy of package are improved, and the warpage of a panel is reduced; the comprehensive alignment accuracy is improved by respective alignment adjustment on each wafer during direct laser exposure in the panel level process, so that fan-out package processing of a fine-pitch bonding pad chip is facilitated; and during the process from wafer level package to panel level package, the advantages of wide metal wiring line width, small line distance and high accuracy of wafer level package and the multiplied package quantity of the panel level package are combined, the package quality and efficiency are obviously improved, and the package cost is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of fan-out packaging, in particular to a fan-out packaging method embedded in a silicon substrate. Background technique [0002] As chips become smaller and the number of I / Os increases, chip-scale packaging can no longer meet the requirements of I / O fan-out. Fan-out wafer-level packaging technology (FOWLP) is a supplement to wafer-level chip size packaging technology. The chip I / O port is led out by reconfiguring the wafer, and solder balls or solder balls are formed on the reconfigured package. Bump terminal array, within a certain range, can replace the traditional wire bonding ball array (WBBGA) package or flip chip ball array (FCBGA) package (<500I / Os) package structure, especially suitable for the booming portable consumer electronics field. [0003] Currently, there are two process routes for fan-out packaging. One is to manufacture at the wafer level, such as 8-inch or 12-inch wafers; the other...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L24/97H01L2224/04105H01L2224/12105H01L2224/19H01L2224/32225H01L2224/73267H01L2224/92244H01L2224/97H01L2924/15153H01L2924/157H01L24/10
Inventor 于大全翟玲玲
Owner HUATIAN TECH KUNSHAN ELECTRONICS
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