Graphene silicon solar cell and manufacturing method

A technology of silicon solar cells and solar cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low quantum efficiency and energy conversion efficiency, poor quality of graphene transparent electrodes, high surface reflectivity of silicon wafers, etc., to achieve Good integrity, improved quantum efficiency and energy conversion efficiency, and excellent properties

Inactive Publication Date: 2016-03-30
SUZHOU JUZHEN PHOTOELECTRIC
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Problems solved by technology

[0003] In the design of graphene-silicon solar cells, the poor quality of the graphene transparent electrode and the high reflectivity of the silicon wafer surface usually limit the conversion efficiency of the cell
In the traditional preparation method of graphene-silicon solar cells, a layer of protective glue is often spin-coated on its surface as a protective layer of graphene during the transfer process, and the protective glue on the surface is removed by a series of physical and chemical methods after transferring to silicon wafers. , but in the removal process usually causes graphene rupture, which affects the integrity of graphene; secondly, more impurities are introduced during the degumming process, which reduces the mobility of graphene; thus, through this The graphene sheet resistance prepared by this method is high, the quality is poor, and the performance of the solar cell obtained is also poor; at the same time in the traditional graphene silicon solar cell, because the surface of the silicon wafer is as high as 36% in the visible light range Reflectivity, most of the light will be reflected by the surface of the silicon wafer and not absorbed, resulting in lower quantum efficiency and energy conversion efficiency

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  • Graphene silicon solar cell and manufacturing method
  • Graphene silicon solar cell and manufacturing method
  • Graphene silicon solar cell and manufacturing method

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Embodiment

[0027] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe in detail the embodiments of the present invention in conjunction with the accompanying drawings.

[0028] This invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art, and the present invention will only be defined by the appended claims.

[0029] The preparation method of described a kind of graphene silicon solar cell, comprises the steps:

[0030] S1, such as figure 1 As shown, select an N-type silicon layer (3) with a resistivity of 1-3Ω·m, a crystal orientation (100), and a thickness of 400um, with a 400nm silicon dioxide layer (4) on its surface.

[0031] S2, such as figure 2 As shown, the...

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Abstract

The invention provides a graphene silicon solar cell and a manufacturing method thereof. The structure of the solar cell comprises a copper adhesive tape bottom layer, a liquid gallium indium alloy electrode layer, an N type silicon wafer layer, a silicon dioxide layer, a PMMA layer (polymethyl methacrylate) protected graphene transparent electrode layer and a silver conductive adhesive electrode layer arranged successively from bottom to top. The technical solution of the invention can obtain high efficiency graphene silicon solar cell and is advantaged by that firstly, damage to the grapheme in the protection layer removing process of the prior transferring method is avoided by adjusting the thickness of the grapheme transfer protection layer PMMA and using the method not removing the protection layer PMMA to transfer the grapheme; secondly, the property of the grapheme is protected well in the transferring process by reserving the PMMA layer, simultaneously P type doping is carried out to the grapheme, the work function of the grapheme is increased, therefore the open-circuit voltage of the graphene silicon solar cell is effectively improved, finally, the reserved PMMA layer has the advantage of an antireflection film, the solar cell of this type remarkably improves the quantum efficiency and energy conversion efficiency of the graphene silicon solar cell under illumination of the same energy.

Description

technical field [0001] The invention relates to the fields of new energy and new materials, in particular to a graphene silicon solar cell. Background technique [0002] With the depletion of fossil energy and the environmental pollution caused by the extensive use of fossil energy, people are eager to find renewable, non-polluting new energy to replace fossil energy. As one of the renewable, clean and pollution-free new energy sources, solar energy has been the research focus of various countries since the 21st century. In the current solar cell market, silicon-based solar cells occupy the mainstream, which have the advantages of high cell efficiency and long battery life, but the high-temperature diffusion process increases the production cost of the cell, thus limiting its further development. develop. In order to reduce the power generation cost of solar cells under the premise of maintaining high efficiency, it is necessary to start with new materials and new structur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/028H01L31/074H01L31/18
CPCH01L31/022425H01L31/022466H01L31/028H01L31/074H01L31/1876H01L31/1884Y02E10/547Y02P70/50
Inventor 刘健胡双元
Owner SUZHOU JUZHEN PHOTOELECTRIC
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