Check patentability & draft patents in minutes with Patsnap Eureka AI!

Material structure used for realizing InGaAs light absorption wavelength expansion

A material structure, light absorption technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of large dark current of InAs, slow response speed of PbSe, low light detection rate, etc., to achieve high microstrip density of states and practical value. The effect of high and large light absorption coefficient

Active Publication Date: 2016-03-30
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are also application limitations in the application of light detection, such as the low light detection rate of InAs and InSb in this band, the slow response speed of PbSe, and the large dark current of InAs requires refrigeration work, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Material structure used for realizing InGaAs light absorption wavelength expansion
  • Material structure used for realizing InGaAs light absorption wavelength expansion
  • Material structure used for realizing InGaAs light absorption wavelength expansion

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Growth of InGaAs strain-compensated quantum well superlattice structure with light absorption long-wavelength cut-off wavelength of 2.1 μm:

[0039] The purpose of this embodiment is to obtain an InGaAs strain-compensated quantum well superlattice material structure with a light absorption long-wave cut-off wavelength of 2.1 μm. The quantum wells and barrier layers shown in this embodiment are all made of InGaAs single-layer material with a fixed In composition, and neither includes a sub-layer structure. Each superlattice period contains a layer of 3nm thick InAs compressive strain quantum well, a layer of 6nm thick In 0.3 Ga 0.7 As tensile strain barrier. The overall strain compensation of the material is close to 100%. Specific material structures such as figure 2 shown. Its structure contains the following materials in order from bottom to top:

[0040] Material 1: semi-insulating InP (001) substrate.

[0041] Material 2: non-doped InP buffer layer with a th...

Embodiment 2

[0050] Growth of InGaAs strain-compensated quantum well superlattice structure with light absorption long-wave cut-off wavelength of 2.5 μm:

[0051] The purpose of this embodiment is to obtain an InGaAs strain-compensated quantum well superlattice material structure with a light absorption long-wave cut-off wavelength of 2.5 μm. The quantum well shown in this embodiment adopts InGaAs single-layer material with fixed In composition and does not include sub-layer structure. The barrier layer adopts an asymmetric barrier structure, including two InGaAs sublayer structures with different In compositions. Each superlattice period contains three layers of material: the compressive strain quantum well is a layer of InAs with a thickness of 1.53nm, and one side of the quantum well is a layer of InAs with a thickness of 2nm. 0.3 Ga 0.7 As tensile strain barrier, the other side is a layer of 2nm thick In 0.4 Ga 0.6 As tensile strain barrier. The overall strain compensation of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a material structure used for realizing InGaAs light absorption wavelength expansion. A periodical InxGa1-xAs multiple quantum well coupling superlattice structure is adopted on an InP substrate; each superlattice period comprises a quantum well layer and a barrier layer; the InxGa1-xAs with the thickness of a is used as the quantum well layer, wherein x is greater than 0.53 and less than or equal to 1; and the InyGa1-yAs with the thickness of b is used as the barrier layer, wherein y is greater than or equal to 0 and less than 0.53. The material structure can ensure a relatively high material quality; the InGaAs light absorption long-wave cut-off wavelength can be extended to 1.7-3.0 um conveniently according to needs; the material structure is particularly suitable for expanding the optical response wavelength of an InGaAs detector; and meanwhile, the material structure is wide in application prospects.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic information materials and devices, in particular to a material structure for realizing InGaAs light absorption wavelength expansion. Background technique [0002] In x Ga 1-x As ternary alloy is one of the most important III-V compound semiconductor optoelectronic materials. It is made of two direct bandgap semiconductor materials, InAs and GaAs, and also has a direct bandgap, so it has high optical absorption coefficient and internal quantum efficiency. Among them, In with InP substrate lattice matching 0.53 Ga 0.47 As material preparation technology is the most mature, and the application is the most extensive. By optimizing growth processes such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), InP (001) substrates can be grown on InP (001) substrates that are nearly perfectly matched to the substrate lattice. 0.53 Ga 0.47 As material. Its d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0248H01L31/0304H01L31/0352
CPCH01L31/0248H01L31/03046H01L31/035236
Inventor 马英杰张永刚顾溢陈星佑
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com