Bi/Er or Bi/Er/Al co-doped quartz fiber and preparation method thereof

A quartz optical fiber and quartz material technology, which is applied in cladding optical fibers, glass optical fibers, glass manufacturing equipment, etc., can solve the problem of limiting the number of wavelength channels that quartz optical fibers can accommodate, and achieve simple structure, good uniformity, and high doping concentration. Effect

Active Publication Date: 2016-04-06
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the gain bandwidth of the erbium-doped fiber amplifier is only 35nm, which only covers a part of the low-loss transmission window of the silica single-mode fiber, which severely limits the number of wavelength channels inherent in the silica fiber.

Method used

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  • Bi/Er or Bi/Er/Al co-doped quartz fiber and preparation method thereof
  • Bi/Er or Bi/Er/Al co-doped quartz fiber and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] see figure 1 (a), a Bi / Er or Bi / Er / Al co-doped silica fiber, including a core 1, an inner cladding 2 and a cladding 3, the core 1 is made of GeO doped with a small amount of high refractive index 2 The inner cladding layer 2 is composed of Bi / Er or Bi / Er / Al co-doped ion material, and the inner cladding layer is deposited on the surface of the quartz substrate 21 by atomic layer deposition technology, and the inner cladding layer Bi / Er or Bi / Al Er / Al co-doped material composition. Deposit Al first 2 o 3 Nanoparticles 100 cycles with Bi 2 o 3 100 cycles of nanoparticles, the aluminum source precursor is trimethylaluminum Al(CH 3 ) 3 (TMA); the oxygen source precursor is ozone O 3 or deionized water H 2 O, Bi(thd) 3 is bi 2 o 3 The gas phase precursor material, the deposition temperature is 200 ℃; then, deposit Er 2 o 3 Nanoparticles 100 cycles, Er(thd) 3 and O 3 is used to deposit Er 2 o 3 The gas phase precursor, the deposition temperature range is 200°C...

Embodiment 2

[0032] see figure 1 (a), a Bi / Er or Bi / Er / Al co-doped silica fiber, including a core 1, an inner cladding 2 and a cladding 3, the core 1 is made of GeO doped with a small amount of high refractive index 2 The inner cladding layer 2 is composed of Bi / Er or Bi / Er / Al co-doped ion material, and the inner cladding layer is deposited on the surface of the quartz substrate 21 by atomic layer deposition technology, and the inner cladding layer Bi / Er or Bi / Al Er / Al co-doped material composition. Deposit Al first 2 o 3 Nanoparticles 1500 cycles with Bi 2 o 3 2000 cycles of nanoparticles, the aluminum source precursor is trimethylaluminum Al(CH 3 ) 3 (TMA); the oxygen source precursor is ozone O 3 or deionized water H 2 O, Bi(thd) 3 is bi 2 o 3 The gas phase precursor material of the deposition temperature is 300 °C; then, the deposition of Er 2 o 3 Nanoparticles 100 cycles, Er(thd) 3 and O 3 is used to deposit Er 2 o 3 The gas phase precursor, the deposition temperature...

Embodiment 3

[0034] see figure 1 (b), a Bi / Er or Bi / Er / Al co-doped silica fiber, including a core layer and a cladding layer 3, the core layer is made of GeO doped with a small amount of high refractive index 2 The quartz loose layer is composed of Bi / Er or Bi / Er / Al ion co-doped material, wherein Bi / Er or Bi / Er / Al ion is deposited by atomic layer deposition technology; Made of pure quartz material. Finally, it shrinks into a rod and draws it. Among them, the Bi / Er or Bi / Er / Al co-doped silica fiber is characterized in that the core and cladding diameter ranges are D core =Φ5μm, D cladding =Φ125μm, the refractive index difference between the core layer and the cladding layer is 0.35%. And the shape of the cladding can be a conventional doped silica amplifying fiber type.

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Abstract

The invention relates to a Bi/Er or Bi/Er/Al co-doped silica fiber based on atomic layer deposition (ALD) technology and a preparation method thereof, and belongs to the fiber technology field. The quartz fiber comprises a fiber core, an inner cladding and a cladding, and is characterized in that the fiber core is made of GeO2; the inner cladding is made of a co-doped material of Bi/Er or Bi/Er/Al; and the cladding is made of pure quartz. The two fiber structures are shown in the following pictures: picture 1(a), wherein the fiber core diameter phi=5-20mum; the inner cladding diameter phi=8-50mum; and the cladding diameter phi=40-400mum; picture 1 (b), wherein the fiber core diameter phi=5-80mum; and the cladding diameter phi=60-400mum. Different ions are doped are deposited alternatively by using ALD technology, and the deposition concentration is 0.01-10mol%. The quartz fiber has the advantages of a simple and reasonable structure, a uniform distribution and a controllable doped concentration.

Description

technical field [0001] The invention relates to a Bi / Er or Bi / Er / Al co-doped silica optical fiber and a preparation method thereof, belonging to the technical field of optical fibers. Background technique [0002] Due to the rapid development of communication systems, the 1.55μm communication window can no longer meet the needs of long-distance and large-capacity communication, and all-optical communication is imperative. At present, fiber amplifiers doped with rare earth elements (such as erbium, thulium, ytterbium, etc.) have the characteristics of wide bandwidth and high gain, and the broadband fluorescent light source produced by optical fibers doped with rare earth elements (neodymium, praseodymium, thulium, erbium) has output The advantages of stable spectrum, low environmental impact, and high output power have always been research hotspots, especially erbium-doped optical fibers have long been widely used in commercial use. However, the gain bandwidth of the erbium-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/02C03B37/014C03B37/018
CPCC03B37/014C03B37/018G02B6/02395
Inventor 文建湘王廷云董艳华王杰庞拂飞陈振宜郭强
Owner SHANGHAI UNIV
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