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Device for producing nano-crystalline silicon thin film

A nanocrystalline silicon and thin film technology, which is applied in the field of devices for generating nanocrystalline silicon thin films, can solve the problems of reduced nucleation rate and deposition rate, low active hydrogen and ion energy, small etching and sputtering effects, etc. Film uniformity, ease of operation, and the effect of reducing the formation of defect states

Inactive Publication Date: 2016-04-13
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In existing ordinary PECVD devices, the energy of active hydrogen and ions is relatively low, and the etching and sputtering effects on the film are relatively small, so the surface of the film is relatively loose and rough
In addition, as the size of nano-silicon particles in the film grown on the substrate increases, the pore defects also increase. The appearance of these amorphous components restricts the conduction and diffusion of ions falling on the film surface, so that the charge reaching the film surface accumulates. This charge accumulation phenomenon ultimately leads to a reduction in the nucleation and deposition rates from acting as a repulsion to subsequent reactive ion populations

Method used

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  • Device for producing nano-crystalline silicon thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029]In Embodiment 1, the pulse bias source provides a DC negative bias, and the grown film is a nanocrystalline silicon-oxygen film nc-Si / SiO X . Among them, sample 6 is double-sided polished P-type (100) crystal phase single crystal silicon (resistivity 5-10Ω cm. The reaction gas entering from the air inlet is SiH 4 、H 2 , N 2 O and SiH 4 mixed gas, H 2 and N 2 The total flow of O is 90sccm-150sccm, preferably 104sccm, the flow ratio is 2:98:2--2:98:10, preferably 2:98:4, and the reaction pressure is 100--300pa, preferably 230pa. The frequency of the radio frequency source 3 is 13.56Mz, and the power is 80-200w, preferably 120w. The pulse bias source 10 provides a DC negative bias voltage with a voltage value of 10-100v, preferably 65v. The film growth time is 1-2 hours.

[0030] Using the nanocrystalline silicon-oxygen film prepared by the device in Example 1, the energy and ion current density of the plasma are controlled by adding a substrate negative bias, which...

Embodiment 2

[0032] In the second embodiment, the pulsed bias source provides pulsed negative bias, and the grown film is hydrogenated nanocrystalline silicon. Among them, sample 6 is Schottky glass and double-sided polished P-type (100) crystal phase single crystal silicon (resistivity 5-10Ω·cm). The reaction gas entering from the inlet is a mixed gas of SiH4 and H2, SiH 4 and H 2 The total flow rate is 90sccm-150sccm, preferably 104sccm, the flow ratio is 2:100-6:100, preferably 4:100, and the reaction pressure is 100-300pa, preferably 190pa. The power is 40-120w, preferably 80w. The frequency of the radio frequency source 3 is 13.56Mz, and the power is 80-200w, preferably 120w. The pulse bias source 10 provides DC pulse negative bias, the pulse frequency is 5-100Hz, preferably 60Hz duty cycle 0-80%, preferably 40%, the voltage amplitude is 60-200v, preferably 120v, and the voltage value is 10- 100v, preferably 65v. The film growth time is 1-2 hours.

[0033] In embodiment two, the...

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Abstract

The invention provides a device for producing a nano-crystalline silicon thin film. The device comprises a radio frequency cathode, a matching network, a radio frequency source, an air inlet, an air outlet, a sample, a bottom electrode, insulating pillars, a thermocouple temperature measurement heating system, a pulse bias source, a cavity, a waste gas treatment system, a total flow controller, a molecular pump and a mechanical pump, wherein the cavity is a metal cavity; the radio frequency cathode, the sample, the bottom electrode and the insulating pillars are arranged in the cavity; the air inlet and the air outlet are formed in the cavity; the radio frequency cathode is opposite to the bottom electrode; a plasma discharge area is arranged between the radio frequency cathode and the bottom electrode; the sample is arranged in the plasma discharge area; the pulse bias source is used for providing bias for the bottom electrode; the output voltage is 60-200 V. The device for producing the nano-crystalline silicon thin film has the characteristics of being simple in structure, easy to control, and excellent in the grown nano-crystalline silicon thin film quality.

Description

technical field [0001] The invention relates to a device for generating nanocrystalline silicon thin films. Background technique [0002] Plasma-enhanced chemical vapor deposition technology is a new preparation technology for the growth of thin-film materials by chemically reacting gaseous substances containing thin-film components by means of glow discharge plasma. In the PECVD thin film deposition process, various parameters (such as changing the ratio of silicon to hydrogen in the reaction gas, changing the substrate temperature, changing the feeding power, etc.) can be changed to improve the film quality and deposition rate. The nucleation and growth of nanocrystalline silicon particles in thin films generally requires high-temperature annealing (temperature time) after film formation. Even for low-temperature deposition, the substrate temperature needs to be between 300-400 degrees, so that flexible substrate growth bring some difficulties. Finding a suitable low-tem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/515C23C16/24
CPCC23C16/24C23C16/515
Inventor 徐艳梅张贵银王永杰赵占龙
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)