Three-dimensional dirac semi-metal material-based infrared saturable absorption device

A three-dimensional Dirac semi-saturable absorption technology, applied in the field of lasers, can solve problems such as reducing the repeatability of devices, limiting the generation and optimization of infrared pulsed lasers, and having no reliable control scheme for nonlinear optical parameters.

Active Publication Date: 2016-04-13
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the commonly used material systems of SESAMs GaAs, InP, etc., their working wavelength can only cover the near-infrared band (<1.5μm)
Although some improvement schemes have appeared in recent years, its working wavelength has not yet been extended to the long-wavelength infrared band, especially the band of 3 μm and above
[0004] In recent years, low-dimensional nanomaterials such as carbon nanotubes, graphene, quasi-two-dimensional topological insulators, two-dimensional transition metal sulfides, and black phosphorus have shown excellent broadband optical satur...

Method used

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  • Three-dimensional dirac semi-metal material-based infrared saturable absorption device

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Embodiment 1

[0029] Embodiment 1: This embodiment provides a design scheme of a reflective three-dimensional Dirac semi-metal material infrared saturable absorption device. to combine image 3 As shown, the specific scheme is as follows; the functional layer (1) is deposited on one side of the gallium arsenide substrate (2) polished on both sides by laser pulse deposition, including optical anti-reflection coating and Al 2 o 3 passivation layer. Then a 200nm three-dimensional Dirac semimetal Cd was grown on the other side of the GaAs substrate using molecular beam epitaxy. 3 As 2 Thin films (3) were finally evaporated on Cd using electron beam 3 As 2 A 1 μm gold film (4) was evaporated on the surface. Among them, Cd 3 As 2 The specific conditions for thin film molecular beam epitaxy growth are as follows: the use of purity ~ 99.999% (5N) cadmium source and arsenic source, the initial pressure in the equipment chamber is about 10 -8 mbar; grow Cd under the condition of substrate te...

Embodiment 2

[0030] Embodiment 2: This embodiment provides a specific design scheme of a transmission-type three-dimensional Dirac semi-metal material infrared saturable absorption device. Such as Figure 4 As shown, Cd with a thickness of 200 nm was grown on the surface of GaAs(2) by molecular beam epitaxy 3 As 2 Thin film (3), then functional layers (1) (optical anti-reflection coating and passivation layer) were coated on both sides of the device using electron beam evaporation.

Embodiment 3

[0031] Embodiment 3: This embodiment provides a design scheme of a semiconductor pulsed laser based on a three-dimensional Dirac semi-metal material infrared saturable absorption device. Such as Figure 5 As shown, the pump source (5) pumps the semiconductor gain structure (6), thereby generating infrared continuous laser light, which passes through the output coupling mirror mirror (7) and reflective three-dimensional Dirac semi-metal material infrared saturable absorption device After the formed microcavity can realize mode-locking or Q-switching, so as to output infrared pulsed laser.

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Abstract

The invention discloses a three-dimensional dirac semi-metal material-based infrared saturable absorption device. A three-dimensional dirac semi-metal material with a zero band gap and a linear energy dispersion relation is utilized as a saturable absorption layer; an operating wavelength covers an infrared region; and a plurality of parameters have high adjustability. The three-dimensional dirac semi-metal material-based infrared saturable absorption device comprises the saturable absorption layer and an optical element, wherein the saturable absorption layer is formed by a three-dimensional dirac semi-metal material; and the optical element is required for bearing the saturable absorption layer; a reflective saturable absorption device comprises a functional layer (1), an optical substrate (2), the saturable absorption layer (3) and a reflecting layer (4) from top to bottom; a transmission type saturable absorption device comprises the functional layer (1), the optical substrate (2) an the saturable absorption layer (3); and the operating wavelength covers the infrared region. An infrared Q-switched and mode-locked laser device of the three-dimensional dirac semi-metal material-based saturable absorption device has the advantages of high stability, tunable operating wavelength, high output power and the like.

Description

technical field [0001] The invention relates to an infrared saturable absorption device based on a three-dimensional Dirac semimetal material, and belongs to the technical field of lasers. Background technique [0002] Infrared pulsed laser has extremely high application value in the fields of spectroscopy, free space communication, medicine and precision surgery. There are mainly two ways to generate infrared pulsed laser, active and passive. Among them, the passive way is favored by people because it does not require external electronic control devices and generates shorter pulses. [0003] Saturable absorbing device is the core device to achieve passive pulsed laser generation. The optical absorptivity of the device decreases with the increase of the incident light power, and has a remarkable optical saturable absorption feature. The relatively mature saturable absorber devices in the technology are semiconductor saturable absorber mirrors (SESAMs). SESAMs are generall...

Claims

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Application Information

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IPC IPC(8): H01S3/098H01S3/11G02F1/355
CPCG02F1/355H01S3/1118H01S3/113
Inventor 王枫秋朱春辉孟亚飞徐永兵张荣祝世宁
Owner NANJING UNIV
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