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Synthetic method of boron-based strong-oxytropism pure phase Dy2S3

A synthesis method and pure-phase technology, applied in the field of rare earth metal sulfide synthesis, can solve problems such as difficulty in experimental operation and achieve the effect of preventing reaction

Inactive Publication Date: 2016-04-20
HENAN UNIV OF SCI & TECH
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Problems solved by technology

In order to avoid these effects, the synthesis of pure-phase rare earth chalcogenides requires high vacuum reaction conditions, non-oxygen-containing reaction vessels, pretreatment of oxygen-containing compound impurities, anhydrous and oxygen-free operation techniques to avoid oxidation of metal elements, etc. It brings great difficulties to the experimental operation

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  • Synthetic method of boron-based strong-oxytropism pure phase Dy2S3

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Embodiment Construction

[0021] In order to make the content of the present invention more obvious and understandable, the present invention will be described in detail below in conjunction with specific embodiments.

[0022] A boron-based strong oxophilic pure phase Dy 2 S 3 The synthesis method of the invention uses dysprosium oxide, sulfur element and boron element as raw materials, and uses dysprosium oxide, sulfur element and boron element as raw materials, and encapsulates them in a vacuum quartz tube with a carbon film on the inner wall, and heats them at a temperature of 650-950°C. The reaction under the condition gives Dy 2 S 3 . Reactive Dy 2 o 3 +3S+2B→Dy 2 S 3 +B 2 o 3 , adding elemental boron powder and sulfur powder in a slightly excess stoichiometric ratio to the reaction raw materials, so that Dy 2 o 3 is fully vulcanized as Dy 2 S 3 .

[0023] In order to make the present invention have better implementation effect, described reaction is carried out in the quartz tube of...

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Abstract

The invention discloses a synthetic method of boron-based strong-oxytropism pure phase Dy2S3. The synthetic method adopts dysprosium oxide (Dy2O3), elemental sulfur (S) and elemental boron (B) as raw materials, wherein S and B are slightly overdosed relative to a stoichiometric ratio, the raw materials are encapsulated into a quartz tube the inner wall of which is plated with a high-quality carbon film by using an oxy-hydrogen flame quartz tube vacuum tube sealing technology, and reaction is carried out under a vacuum condition at 650-950 DEG C by using the strong oxytropism of boron to obtain Dy2S3. The synthetic method disclosed by the invention does not relate to the use of a toxic gas H2S or an organic solvent CS2, the slight overdose of S and B in reactants is beneficial for complete reaction, and the high-quality carbon film which is plated uniformly and compactly on the inner wall of the quartz tube and cannot fall off easily can effectively prevent the quartz tube from reacting with the reaction raw materials, and cannot pollute a final product, thereby promoting the obtaining of the pure phase Dy2S3.

Description

technical field [0001] The invention belongs to the field of synthesis of rare earth metal sulfides, in particular to a boron-based strong oxophilic pure phase Dy 2 S 3 synthetic method. Background technique [0002] Because the rare earth element Dy has a special 4f electronic structure, it endows its sulfide Dy 2 S 3 Many special properties, such as low-temperature superconductivity, nonlinear optical properties, thermoelectric properties, etc. Its application is also very extensive, and can be used as conductive materials, optical materials, magnetic materials, thermoelectric materials, etc. Furthermore, orthogonal rare earth manganese oxides, such as DyMnO 3 , is a well-known single-phase multiferroic material, and the ferroelectric polarization is the largest among multiferroic orthorhombic rare earth manganese oxides. O and S are the same main group element, and S 2- with O 2- Compared with , there is a larger delocalization radius, so it is inferred that if th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01F17/00
CPCC01F17/288C01P2002/72
Inventor 王景雪王晓飞
Owner HENAN UNIV OF SCI & TECH