Two-groove wide-ridge type semiconductor light amplifier and preparation method thereof

A technology of optical amplifiers and semiconductors, which is applied in the field of optoelectronics, can solve problems such as unstable output power, and achieve the effects of increasing output power, improving single-mode output effects, and improving coupling efficiency

Inactive Publication Date: 2016-04-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] In view of this, the object of the invention is to provide a semicond

Method used

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  • Two-groove wide-ridge type semiconductor light amplifier and preparation method thereof
  • Two-groove wide-ridge type semiconductor light amplifier and preparation method thereof

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specific Embodiment approach 1

[0037] see figure 1 Shown, a kind of double groove wide ridge type semiconductor optical amplifier (should wavelength 1.55 μm) that the present invention proposes, this structure comprises:

[0038] A substrate 12, the substrate is rectangular, and its material is n-InP semiconductor material;

[0039] -n electrode 11, the electrode is a large-area electrode, and the electrode is connected to the substrate as an Au-Ge-Ni metal material:

[0040] - superstructure, the superstructure is fabricated on the substrate, the superstructure comprising:

[0041] A resonant cavity, the resonant cavity is a parallelogram with a cavity surface inclination angle of 5°;

[0042] An output waveguide is a ridge waveguide 21, and the ridge is a double-groove confinement structure;

[0043] - a p-electrode layer 19 on the ohmic contact layer 17;

[0044] - electrical isolation layers 18, on both sides of the ridge waveguide;

[0045] - P-type ohmic contact layer 17 grown on the cladding wit...

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Abstract

The invention relates to a two-groove wide-ridge type semiconductor light amplifier, which comprises a substrate and an epitaxial layer growing on the substrate, wherein the upper part of the epitaxial layer comprises an n type waveguide layer, an active area quantum well layer, a p type covering layer and an ohmic contact layer; the active area quantum well layer is arranged at the upper part of the n type waveguide layer; the p type covering layer and the ohmic contact layer are arranged at the upper part of the active area quantum well layer; the partial region of the ohmic contact layer is vertically and downwards etched into the n type waveguide layer to form a two-groove limitation ridge type structure; two grooves are two mutually parallel grooves; the width of the ridge type structure is identical to the thickness of a ridge type waveguide. A waveguide coupling mode is adopted; a coplanar waveguide is used as a filter; the single-mode output in the large-mode volume is realized; the output power is increased; meanwhile, the coupling efficiency is also improved.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, in particular to a double-groove wide-ridge semiconductor optical amplifier and a preparation method thereof. Background technique [0002] High-power semiconductor optical amplifiers (SOAs) (eg, wavelength 1.55 μm) are essential devices in free-space optical communication, eye-safe laser ranging and image processing. Although the watt-level optical amplifiers used before are all solid-state amplifiers, such as optical fiber amplifiers (EDFAs), SOAs are easy to integrate with other semiconductor devices because of their small size, light weight, flexible wavelength, wide gain bandwidth, and high optical-to-electrical conversion efficiency. (such as lasers, detectors, modulators) integration and other characteristics, so SOAs with a large output power exceeding 1W is still a hot spot in international research. [0003] Traditional ridge waveguide SOAs have small mode volumes and large opt...

Claims

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Application Information

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IPC IPC(8): H01S5/343
CPCH01S5/343
Inventor 于丽娟刘建国祝宁华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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