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Si-TiO2-PANI (silicon-titanium dioxide-polyaniline) composite material assembled based on ternary hierarchy and application thereof

A composite material, titanium dioxide technology, applied in organic compound/hydride/coordination complex catalysts, chemical instruments and methods, chemical/physical processes, etc., can solve the problems of low photoelectric conversion efficiency, easy agglomeration, and difficult recycling, etc. Achieve excellent anti-reflection performance, not easy to agglomerate, and easy to recycle

Active Publication Date: 2016-05-04
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a silicon-titanium dioxide-polyaniline (Si / TiO 2 / PANI) composite material, which has good anti-reflection performance and high-efficiency separation of photogenerated charges, improves the photoelectric conversion efficiency of the material, and shows excellent photoelectric performance. recycle

Method used

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  • Si-TiO2-PANI (silicon-titanium dioxide-polyaniline) composite material assembled based on ternary hierarchy and application thereof
  • Si-TiO2-PANI (silicon-titanium dioxide-polyaniline) composite material assembled based on ternary hierarchy and application thereof
  • Si-TiO2-PANI (silicon-titanium dioxide-polyaniline) composite material assembled based on ternary hierarchy and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Step 1: Growth of TiO on the surface of single crystal silicon 2 seed crystal

[0024] Place the wafer in NH 3 h 2 O, H 2 o 2 and H 2 In the mixed solution of O, the volume ratio is 1:1:5, the temperature is 80°C, and the heating time is 30min. Then, immerse in the isopropanol solution of tetrabutyl titanate with a concentration of 0.075mol / L for pulling, the pulling speed is 2mm / s, and the pulling is repeated 20 times. Calcined in the furnace for about 30min.

[0025] Step 2: TiO 2 Seed induced TiO 2 Preparation of nanorods

[0026] Attach TiO to the surface obtained in step 2 2 The seeded silicon wafers were placed under hydrothermal conditions to grow TiO 2 Nano stave. The hydrothermal synthesis condition is at a temperature of 130°C, and treated in a reactor filled with 10mL deionized water, 10mL concentrated hydrochloric acid (37% mass fraction) and 0.5mL tetrabutyl titanate for 8h, and then the sample was taken out and blown dry with nitrogen .

[00...

Embodiment 2

[0031] Step 1: Growth of TiO on the surface of single crystal silicon 2 seed crystal

[0032] Place the wafer in NH 3 h 2 O, H 2 o 2 and H 2 In the mixed solution of O, the volume ratio is 1:1:5, the temperature is 80°C, and the heating time is 40min. Then, immerse in the isopropanol solution of tetrabutyl titanate with a concentration of 0.05mol / L for pulling. The pulling speed is 2mm / s, and the pulling is repeated 15 times. Finally, the above sample is placed in a 450°C muffle Calcined in the furnace for about 1h.

[0033] Step 2: TiO 2 Seed induced TiO 2 Preparation of nanorods

[0034] The surface obtained in step 1 is attached with TiO 2 The seeded silicon wafers were placed under hydrothermal conditions to grow TiO 2 Nano stave. The hydrothermal synthesis condition is at a temperature of 130°C, and treated in a reactor filled with 10mL deionized water, 10mL concentrated hydrochloric acid (37% mass fraction) and 0.5mL tetrabutyl titanate for 8h, and then the s...

Embodiment 3

[0039] Step 1: Growth of TiO on the surface of single crystal silicon 2 seed crystal

[0040] Place the wafer in NH 3 h 2 O, H 2 o 2 and H 2 In the mixed solution of O, the volume ratio is 1:1:5, the temperature is 90°C, and the heating time is 30min. Then, immerse in the isopropanol solution of tetrabutyl titanate with a concentration of 0.1mol / L for pulling. The pulling speed is 2mm / s, and the pulling is repeated 10 times. Finally, the above sample is placed in a 500°C muffle Calcined in the furnace for about 30min.

[0041] Step 2: TiO 2 Seed induced TiO 2 Preparation of nanorods

[0042] The surface obtained in step 1 is attached with TiO 2 The seeded silicon wafers were placed under hydrothermal conditions to grow TiO 2 Nano stave. The hydrothermal synthesis condition is at a temperature of 120°C, and treated in a reactor filled with 10mL of deionized water, 10mL of concentrated hydrochloric acid (37% by mass) and 0.5mL of tetrabutyl titanate for 8h, and then ...

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Abstract

The invention relates to a Si-TiO2-PANI (silicon-titanium dioxide-polyaniline) composite material assembled based on a ternary hierarchy. The composite material is prepared according to the following steps of (1) performing hydrophilic treatment on a silicon wafer, growing TiO2 seed crystal on the surface of the silicon wafer, putting the silicon wafer into a muffle furnace, and roasting the silicon wafer in the muffle furnace for a certain time; (2) putting the silicon wafer which is obtained in the step (1) in a reaction kettle, wherein the TiO2 seed crystal is adhered to the surface of the silicon wafer, and growing a TiO2 nano-rod on the surface of the silicon wafer in an inducing manner by utilization of a hydro-thermal synthesis method; (3) depositing conductive polyaniline nanoparticles on the TiO2 nano-rod obtained in the step (2) so as to obtain the Si-TiO2-PANI composite material assembled based on the ternary hierarchy. The Si-TiO2-PANI composite material assembled based on the ternary hierarchy disclosed by the invention has the advantages of excellent capabilities of lowering light reflection on a material surface and effectively separating photo-generated charges, and can be applied to photoelectric conversion devices, solar cells and photocatalytic organic dyestuff degradation.

Description

technical field [0001] The invention relates to a composite material of ternary hierarchical assembly, that is, a silicon-titanium dioxide-polyaniline composite material, which can be used as a photocatalytic material and a photoelectric conversion material, and belongs to the technical field of photoelectric materials. Background technique [0002] At present, remarkable achievements have been made in improving the excellent performance of materials by compounding inorganic semiconductors and conductive polymer materials. Among them, the composite of titanium dioxide and polyaniline has become a research hotspot in this field. Due to the advantages of high catalytic activity, good stability, high yield of hydroxyl radicals, and no corrosion under light, titanium dioxide nanomaterials have particularly prominent application prospects in anti-corrosion coatings, sewage purification, antibacterial sterilization, etc. Polyaniline has good environmental stability and strong abs...

Claims

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Application Information

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IPC IPC(8): C08L79/02C08K9/00C08K3/02C08K3/22C08G73/02B01J31/38
CPCC08G73/0266C08K3/02C08K3/22C08K9/00B01J31/38C08K2201/003C08K2201/011C08K2003/2241C08K2003/023B01J35/39C08L79/02
Inventor 石刚李赢倪才华王大伟何飞迟力峰吕男
Owner JIANGNAN UNIV
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