Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Positive/negative (P/N) heterojunction based silicon/titanium dioxide three-dimensional composite material with synergic anti-reflection performance and application thereof

A composite material, titanium dioxide technology, applied in the direction of climate sustainability, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve problems such as single reduction of light reflection, achieve excellent anti-reflection performance, reduce compounding, and simple preparation method. Effect

Inactive Publication Date: 2016-05-25
JIANGNAN UNIV
View PDF2 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the problem that the traditional anti-reflection structure is limited to a single reduction in light reflection, and to provide a silicon / titanium dioxide three-dimensional composite material based on P / N heterojunction synergistic anti-reflection performance, which has good anti-reflection performance and The ability to efficiently separate photogenerated charges improves the photoelectric conversion efficiency of the material and shows excellent photocatalytic ability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive/negative (P/N) heterojunction based silicon/titanium dioxide three-dimensional composite material with synergic anti-reflection performance and application thereof
  • Positive/negative (P/N) heterojunction based silicon/titanium dioxide three-dimensional composite material with synergic anti-reflection performance and application thereof
  • Positive/negative (P/N) heterojunction based silicon/titanium dioxide three-dimensional composite material with synergic anti-reflection performance and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Step 1: Preparation of silicon cone

[0025] Prepare 100 mL of KOH solution with pH=13, add 25 mL of isopropanol to it, place the silicon wafer in the solution, etch at 70° C. for 30 min, and continuously stir with mechanical stirring during the etching process. After etching, the wafers were rinsed with distilled water and then blown dry with nitrogen.

[0026] Step 2: Growing TiO on the sidewall of the silicon cone 2 seed crystal

[0027] Place the silicon chip with silicon cone structure obtained in step 1 in NH 3 h 2 O, H 2 o 2 and H 2 In the mixed solution of O, the volume ratio is 1:1:5, the temperature is 80°C, and the heating time is 30min. Then, immerse in the isopropanol solution of tetrabutyl titanate with a concentration of 0.075mol / L for pulling, the pulling speed is 2mm / s, and the pulling is repeated 20 times. Calcined in the furnace for about 30min.

[0028] Step 3: 3D Si / TiO 2 Composite material preparation

[0029] Attach TiO to the surface o...

Embodiment 2

[0032] Step 1: Preparation of silicon cone

[0033] Prepare 100 mL of KOH solution with pH=14, add 25 mL of isopropanol to it, place the silicon wafer in the solution, etch at 80° C. for 45 min, and continuously stir with magnetic stirring during the etching process. After etching, the wafers were rinsed with distilled water and then blown dry with nitrogen.

[0034] Step 2: Growing TiO on the sidewall of the silicon cone 2 seed crystal

[0035]Place the silicon chip with silicon cone structure obtained in step 1 in NH 3 h 2 O, H 2 o 2 and H 2 In the mixed solution of O, the volume ratio is 1:1:5, the temperature is 80°C, and the heating time is 40min. Then, immerse in the isopropanol solution of tetrabutyl titanate with a concentration of 0.05mol / L for pulling. The pulling speed is 2mm / s, and the pulling is repeated 15 times. Finally, the above sample is placed in a 450°C muffle Calcined in the furnace for about 1h.

[0036] Step 3: 3D Si / TiO 2 Composite material pr...

Embodiment 3

[0040] Step 1: Preparation of silicon cone

[0041] Prepare 100 mL of KOH solution with pH=14, add 25 mL of isopropanol to it, place the silicon wafer in the solution, etch at 90° C. for 60 min, and continuously stir with mechanical stirring during the etching process. After etching, the wafers were rinsed with distilled water and then blown dry with nitrogen.

[0042] Step 2: Growing TiO on the sidewall of the silicon cone 2 seed crystal

[0043] Place the silicon chip with silicon cone structure obtained in step 1 in NH 3 h 2 O, H 2 o 2 and H 2 In the mixed solution of O, the volume ratio is 1:1:5, the temperature is 90°C, and the heating time is 30min. Then, immerse in the isopropanol solution of tetrabutyl titanate with a concentration of 0.1mol / L for pulling. The pulling speed is 2mm / s, and the pulling is repeated 10 times. Finally, the above sample is placed in a 500°C muffle Calcined in the furnace for about 30min.

[0044] Step 3: 3D Si / TiO 2 Composite materi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
reflectanceaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to a positive / negative (P / N) heterojunction based silicon / titanium dioxide three-dimensional composite material with synergic anti-reflection performance. The silicon / titanium three-dimensional composite material is prepared according to the following method of (1) firstly, carrying out anisotropic etching on a silicon wafer with an alkali liquid, and forming a closely-arranged square conical shape on the surface of the silicon wafer; (2) secondly, carrying out hydrophilic treatment on the silicon wafer etched in the step (1), growing titanium dioxide crystal seed on the surface of the silicon wafer, and placing the silicon wafer in a muffle for calcination; and (3), finally, placing the silicon wafer with the titanium dioxide crystal seed on the surface, obtained in the step (2), in a reaction kettle, and obtaining the silicon / titanium dioxide three-dimensional composite material by adopting a hydrothermal method. The composite material disclosed by the invention is compatible with capabilities of excellent reflection elimination and high-efficiency photo-induced charge separation, and can be applied to the fields such as photocatalysis, a photoelectric conversion device and a solar cell.

Description

technical field [0001] The invention relates to a silicon / titanium dioxide three-dimensional composite material based on P / N heterojunction synergistic anti-reflection performance. At the same time, the composite can be used as a photocatalytic material and a photoelectric conversion material, and belongs to the technical field of photoelectric materials. Background technique [0002] In recent years, anti-reflection technology has been widely used in various fields such as solar cells, optoelectronic devices, sensors, and focal length lenses to reduce the loss of light reflection between interfaces. The traditional anti-reflection method is to deposit one or more layers with a refractive index between the substrate and the air on the substrate, so that the refractive index is gradually changed from the air to the substrate to meet the anti-reflection effect. However, continuous variation of the refractive index from the air to the substrate in multilayer films is difficult ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/074H01L31/18
CPCH01L31/074H01L31/18Y02E10/50Y02P70/50
Inventor 石刚李赢王大伟倪才华何飞迟力峰吕男
Owner JIANGNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com