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A preparation method of epitaxial structure with electron blocking and hole adjusting layer

A technology for electron blocking layer and hole adjustment, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as material degradation, cracks, and hole concentration reduction, and achieve the effect of improving crystal quality

Active Publication Date: 2019-01-29
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, most of the P-type AlGaN has a single-layer structure with a constant aluminum component. With the increase of magnesium, the hole concentration in AlGaN increases monotonously. When the hole concentration reaches the maximum, as the magnesium continues to increase, the self-compensation effect of magnesium causes the hole concentration to decrease instead, and the material deteriorates to produce cracks

Method used

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  • A preparation method of epitaxial structure with electron blocking and hole adjusting layer
  • A preparation method of epitaxial structure with electron blocking and hole adjusting layer
  • A preparation method of epitaxial structure with electron blocking and hole adjusting layer

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Embodiment 1

[0049] See attached Figure 1~3 , the present invention proposes a method for preparing an epitaxial structure with a current blocking and hole adjusting layer, which includes the following steps:

[0050] S01. A substrate 10 is provided, and the substrate 10 is selected from one of materials such as sapphire, silicon carbide, silicon, and gallium nitride;

[0051] S02, depositing a buffer layer 20 on the substrate 10, the buffer layer 20 is a non-doped nitride layer or a low-doped nitride layer;

[0052] S03, depositing an N-type doped semiconductor layer 30 on the buffer layer 20;

[0053] S04, depositing the light-emitting layer 40 on the N-type semiconductor layer 30;

[0054] S05. Adjust the temperature of the reaction chamber to 600~1000°C, the pressure to 50~500torr, and the deposition material to be Al x0 In y0 Ga 1-x0-y0 The P-type doped hole injection layer 50 of N is on the light-emitting layer 40, y 0 > x 0 >0, the P-type doped hole injection layer 50 has a ...

Embodiment 2

[0067] See attached Figure 5 and 6 The difference between this embodiment and Embodiment 1 is that when the multilayer structure 60 is deposited, the unintentional P-type doped sub-combination layers (61, 62, ...) adjacent to the hole injection layer 50 in the formed multilayer structure 60 are deposited. When the number is greater than 3, then continue to deposit intentional P-type doped sub-combination layers (61', 62'...) on this unintentional P-type doped sub-combination layer, and then this unintentional P-type doped sub-combination layer The sub-combination layer and the P-type doped sub-combination layer are sequentially stacked to finally form a multi-layer structure 60 . The number of the unintentional P-type doped sub-combination layer adjacent to the hole injection layer 50 and the intentional P-type doped sub-combination layer deposited on it can be flexibly adjusted according to the electrical performance requirements of actual production, and is not limited to ...

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Abstract

A preparation method for an epitaxial structure provided with an electron blocking layer and a hole adjustment layer is disclosed. The preparation method comprises the following steps of providing a substrate; depositing a buffer layer on the substrate; depositing an N type doped semiconductor layer on the buffer layer; depositing a light-emitting layer on the N type doped semiconductor layer; depositing a P type doped hole injection layer having the material of Alx0Iny0Ga1-x0-y0N on the light-emitting layer; depositing a multilayer structure on the hole injection layer, wherein the multilayer structure is formed by the electron blocking layer having the material of Alx1Iny1Ga1-x1-y1N and the hole adjustment layer having the material of Alx2Iny2Ga1-x2-y2N in an alterative stacking manner; y0 is greater than x0, and x0 is greater than 0; x1 is greater than y1, and y1 is greater than 0; x2 is greater than or equal to y2, and y2 is greater than 0; x1 is greater than x2, and x2 is greater than or equal to x0; and y0 is greater than y2, and y2 is greater than y1; and depositing a P type doped semiconductor layer on the multilayer structure to form the epitaxial structure.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, in particular to a method for preparing an epitaxial structure with an electron blocking and hole adjusting layer. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) is an epitaxial solid-state light-emitting device. By applying a forward voltage across the device, electrons and holes recombine in the active region to generate a large number of photons, and electrical energy is converted into light energy. Gallium nitride-based epitaxy is the third-generation epitaxy material after Si and GaAs, and has developed rapidly in recent years. But it also faces many problems. For example, when the LED is in working state, a large amount of electrons will overflow from the active layer, which greatly reduces the luminous efficiency. The solution commonly used at present is to grow a P-type AlGaN electron blocking layer behind the light-emitting layer to redu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14
CPCH01L33/007H01L33/145
Inventor 张佳胜蔡吉明黄文宾蓝永凌林兓兓张家宏
Owner ANHUI SANAN OPTOELECTRONICS CO LTD