Silicon oxide thin film based low power consumption resistive random access memory and preparation method therefor

Abstract

The invention discloses a silicon oxide thin film based low power consumption resistive random access memory. The low power consumption resistive random access memory comprises a substrate, a Ti adhesion layer, a bottom electrode, a resistance variable layer and a top electrode that are overlaid in sequence; the resistance variable layer is the silicon oxide thin film with a loose structure; the preparation method for the resistive random access memory comprises the following steps of preparing the Ti adhesion layer on the substrate; preparing a Pt bottom electrode on the Ti adhesion layer; and preparing the silicon oxide thin film resistance variable layer on the Pt bottom electrode through a radio frequency magnetron sputtering method, wherein the process conditions of the radio frequency magnetron sputtering are as follows: a silicon oxide target is taken as the sputtering target material; the cavity pressure is less than 5*10<-6>Torr; the sputtering temperature, sputtering pressure, sputtering power, argon flow and volume fraction of oxygen are properly controlled; and preparing a point-like metal Ag thin film on the resistance variable layer through a direct current magnetron sputtering method on the resistance variable layer to be used as the top electrode to obtain the resistive random access memory. The resistive random access memory has the advantages of low preparation temperature, and low operating voltage.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a low-power resistive variable memory prepared at room temperature and using a silicon dioxide thin film with a low aggregation density as a resistive variable layer and a preparation method thereof. Background technique [0002] Resistive RAM (RRAM) is composed of a simple sandwich structure (MIM) metal / resistive layer / metal. Due to its fast switching speed, large integration density, long retention time, and the potential for multi-value storage, It has been extensively and deeply studied in recent years. The basic principle of RRAM is that the resistance of the resistive material layer can be reversibly switched between a high-resistance state ("OFF" state) and a low-resistance state ("ON" state) under the excitation of an external voltage, thereby realizing data storage. Features. Among them, when the voltage applied to the top electrode of the device is swept f...

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Problems solved by technology

Although these prepared silicon dioxide-based RRAMs have good resistive characteristics, the preparation temperature of the resistive layer is high, the operating voltage of the RRAM is high, and there are still problems of high energy consumption, incompatibility of the preparation process and high power consumption. The problem

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