The invention discloses a method for manufacturing an N-channel punch-through silicon carbide insulated gate bipolar transistor. The method mainly solves the problem that currently, the manufacturing cost of the silicon carbide insulated gate bipolar transistor is too high. The method includes the implementation steps that first, an N-type silicon carbide substrate with excellent structural performance is selected, and an N-type epitaxial layer is grown on the front face of the substrate in an epitaxial mode; second, a P well region, a P+ body contact region and an N+ emitter region are sequentially formed on the epitaxial layer of the substrate through ion implantation; third, ion implantation of a P+ collector region and high-temperature annealing are performed on the back face of the substrate, and implanted impurities are activated; fourth, an etching gate oxide layer is grown on the front face of the substrate, and a polysilicon gate is deposited; fifth, metal is deposited on the front face and the back face of the substrate respectively, and electrodes are led out. Compared with an existing method, the method for manufacturing the N-channel silicon carbide insulated gate bipolar transistor has the advantages that an over-thick voltage resisting layer does not need to be grown in an epitaxial mode, a large amount of production cost is saved, the technological steps are simplified, and the transistor can be used for an inverter, a switch power supply and a lighting circuit.