Directed Self-Assembly Template Transfer Method

Abstract

The invention provides a directed self-assembly template transfer method. The directed self-assembly template transfer method comprises the following steps: providing a semiconductor substrate, and forming a mask layer on the semiconductor substrate; forming a buffer layer on the mask layer; forming a block copolymer on the buffer layer; carrying out directed self-assembly on the block copolymer to respectively form a first area and a second area, which are constituted by a first component and a second component of the block copolymer; selectively removing the first area and retaining the second area to form a preset pattern; etching the buffer layer by the preset pattern to form a buffer layer pattern; and etching the mask layer with the buffer layer pattern as a mask to form a mask layer pattern. Since the buffer layer composed of noncrystalline silicon or polycrystalline silicon is introduced in the directed self-assembly template transfer method provided by the invention, the high dependency on the weak etching property of the block copolymer molecules in an etching process is reduced, therefore an etching structure with high fidelity and good repeatability can be obtained.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, and more specifically relates to a method for manufacturing nanometer-scale graphics by using block copolymer directed self-assembly technology. Background technique [0002] At present, the silicon-based CMOS integrated circuit technology node has crossed the micron, submicron, and deep submicron stages and entered the nanometer era. In 2012, the major international semiconductor manufacturer Intel Corporation of the United States officially launched a revolutionary three-dimensional multi-gate transistor structure ( Finfet) 22nm microprocessor. TSMC Corporation in Taiwan, China has officially mass-produced 28nm high-K metal gate integrated circuit chips since 2012. At present, the process research and development for the 16 / 14nm node based on the three-dimensional multi-gate architecture has also been fully carried out, and commercial products have been launched. [0003] Photo...

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Problems solved by technology

However, in Al 2 o 3 SiO 2 During the transfer process, byproducts are easy to deposit on the bottom, making it difficult to completely open the mask layer. Therefore, a large amount of over-etching and necessary cleaning processes are often required, making it difficult to control

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