Manufacturing method of low temperature polysilicon tft backplane
A technology of low-temperature polysilicon and its production method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of polysilicon layer 300 having too many grains, affecting the electrical properties of TFT, and poor grain quality, etc., to achieve Effects of improving grain size, grain quality, and electrical properties of TFT
Active Publication Date: 2018-08-14
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
Among them, implanting high-dose dopant ions into the entire surface of the amorphous silicon layer, and then conducting rapid thermal annealing to induce crystallization of the amorphous silicon will result in polysilicon layer 300 having many crystal grains, many grain boundaries, and poor grain quality. Not good, thus affecting the electrical properties of TFT
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[0043] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.
[0044] see figure 2 , the invention provides a method for manufacturing a low-temperature polysilicon TFT backplane, comprising the steps of:
[0045] Step 1, such as image 3 As shown, a substrate 1 is provided, and a buffer layer 2 and an amorphous silicon layer 3' are sequentially deposited on the substrate 1.
[0046]Specifically, the substrate 1 is preferably a glass substrate.
[0047] The material of the buffer layer 2 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of both.
[0048] Step 2, such as Figure 4 As shown, a layer of photoresist is coated on the amorphous silicon layer 3', and a photoresist process is performed on the layer of photoresist to form a photoresist on the area of the amorphous silicon la...
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The invention provides a method for manufacturing a low-temperature polysilicon TFT backplane. A photoresist pattern (4) is formed on an amorphous silicon layer (3') corresponding to a region where a TFT channel region is to be formed, and the photoresist pattern (4) is used ) is a shielding layer, implanting high-dose dopant ions into the amorphous silicon layer (3'), and forming multiple arrays in the amorphous silicon layer (3') corresponding to the region where the TFT channel region is to be formed. , spaced apart, and regular-shaped ion heavily doped blocks (31), and then perform rapid thermal annealing treatment to transform the amorphous silicon layer (3') into a polycrystalline layer (3), which can make the amorphous silicon layer (3') corresponding to the region where the TFT channel region is to be formed, lateral crystallization is performed using the plurality of heavily ion-doped blocks (31) arranged in an array, spaced apart from each other, and regular in shape as crystal nuclei, so that Improve the grain size of the polysilicon layer, reduce the number of grain boundaries, improve the quality of grains, and improve the electrical properties of TFT.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a low-temperature polysilicon TFT backplane. Background technique [0002] In the field of display technology, flat panel display technologies such as Liquid Crystal Display (LCD) and Organic Light Emitting Diode (OLED) have gradually replaced CRT displays. Among them, OLED has many advantages such as self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, wide temperature range, and can realize flexible display and large-area full-color display. It is recognized by the industry as the display device with the most development potential. [0003] OLED can be divided into passive OLED (PMOLED) and active OLED (AMOLED) according to driving type. Low Temperature Poly-Silicon (LTPS) thin film transistor (Thin Film Transistor, TFT) has been paid attention to by the indu...
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IPC IPC(8): H01L27/12H01L27/32H01L21/77
CPCH01L27/1277H10K59/12H01L27/1255H01L29/78696H01L29/66757
Inventor 白丹徐源竣
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD