A planar metal oxide semiconductor diode with adjustable turn-on voltage

Abstract

The invention relates to the semiconductor technology, and especially to a plane type metal oxide semiconductor diode with an adjustable threshold voltage. The diode of the invention includes an N type heavy doping single crystal silicon substrate, an N-epitaxial layer, a cathode electrode, and an anode electrode. Both sides of an upper layer of the N-epitaxial layer are provided with N type heavy doping regions. P type buried layers are connected to lower surfaces of the N type heavy doping regions. Metal regions are connected to the upper surfaces of the N type heavy doping regions and P type heavy doping regions. The middle part of the upper surface of the N-epitaxial layer is provided with a plane gate structure. The both sides of a lower surface of a silicon dioxide gate oxide layer are in contact with the upper surfaces of the N type heavy doping regions. A nitride dielectric layer is arranged on the upper surface of the silicon dioxide gate layer. The anode electrode is connected to the P type heavy doping regions through the metal regions and forms the ohmic contact with the P type buried layers. The plane type metal oxide semiconductor diode with the adjustable threshold voltage has the beneficial effects that the plane type metal oxide semiconductor diode has a larger forward current, a less conduction voltage drop and a less reverse leakage current, and the threshold voltage of a device in the conditions that the reverse breakdown voltage and the reverse leakage current are not influenced can be adjustable.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a planar metal oxide semiconductor diode with adjustable turn-on voltage. Background technique [0002] Diodes are one of the most commonly used electronic components. Traditional rectifier diodes are mainly Schottky rectifiers and PN junction rectifiers. Among them, the PN junction diode can withstand a high reverse blocking voltage and has good stability, but its forward conduction voltage drop is relatively large, and its reverse recovery time is relatively long. Schottky diodes are manufactured using the principle of metal-semiconductor junctions formed by metal-semiconductor contacts, and the on-state voltage drop is low. Due to the conduction of unipolar carriers, Schottky diodes have no excess minority carrier accumulation during forward conduction, and the reverse recovery is relatively fast. However, the reverse breakdown voltage of the Schottky diode is low, the reverse lea...

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Problems solved by technology

However, once the existing diode is prepared, its forward voltage is fixed, which limits the application of the device to a certain extent.

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