Gallium Nitride Schottky Diode Multi-stage Limiter Circuit

Abstract

The invention discloses a gallium nitride schottky diode multi-stage limiting circuit, which mainly solves the problems of small power capacity and slow response speed of the existing limiter. From left to right, it is the first-level pair of tubes (1), the second-level pair of tubes (2), and the third-level pair of tubes (3). Both tubes use lateral gallium nitride Schottky diodes with a grooved anode structure. The first stage uses Pt as the anode metal for the two diodes in the tube, and the turn-on voltage is 1.2V; the second stage uses Ni for the two diodes in the tube. As the anode metal, the turn-on voltage is 0.8V, and the two diodes in the third pair of tubes use W or Mo as the anode metal, and the turn-on voltage is 0.4V. The invention adopts gallium nitride Schottky diodes whose turn-on voltage decreases step by step, which significantly improves the frequency response of the limiting circuit, reduces the limiting level, improves the power capacity, and can be used for microwave protection.

Description

technical field [0001] The invention belongs to the technical field of microwaves, and in particular relates to a multi-level limiting circuit of a gallium nitride Schottky diode, which can be used for microwave protection. [0002] technical background [0003] With the continuous advancement of science and technology, electronic equipment is constantly developing towards integration and miniaturization. More and more advanced precision components greatly increase the function and performance of the equipment, but also make the equipment system more complex. In order to ensure that the equipment can cope with the impact of high-power microwaves, professional microwave protection design is required. The core low-noise amplifier of the radar receiver is easily burnt by the received high-power microwaves. It is necessary to design a limiter circuit at the front end of the radar receiver, so that the low-power microwave signal can pass through with less loss, and the high-power ...

AI Technical Summary

Problems solved by technology

[0004] The traditional limiter uses a PIN diode made of Si material. Since the PIN diode of Si material has a low-doped P region, a non-doped I region, and a low-doped N region, there are two kinds of charge and discharge of electrons and holes. process, causing the device time constant to be too long and the response speed of the limiter to be slow

At the same time, due to the narrow bandgap characteristics of the Si material, the performance of the limiter is further limited, it is difficult to continue to improve the power capacity and frequency response, and it is also facing severe challenges in terms of high temperature resistance and radiation resistance.

[0005] The wide bandgap semiconductor material GaN has great advantages in electrical properties. Due to the strong spontaneous polarization and piezoelectric polarization effects of the AlGaN / GaN heterojunction structure, a high concentration of two-dimensional Electron gas, because the electrons are confined in the potential well, and the impurity doping in this region is very little, so the ionized impurity scattering and alloy disorder scattering are small, the two-dimensional electron gas has extremely high mobility and electron saturation rate, and GaN Due to the inherent wide bandgap property of the material, its critical breakdown field strength is extremely large, which is suitable for the production of high-power high-frequency microwave devices. It is expected to be applied to limiting circuits and greatly improve performance, but there is currently a lack of relevant technical solutions and research results.

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