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Perovskite-type solar cell and preparation method

A solar cell and perovskite-type technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low photoelectric conversion efficiency, achieve the effects of improving photoelectric conversion efficiency, increasing contact area, and improving absorption efficiency

Active Publication Date: 2016-05-25
HAIMEN THE YELLOW SEA ENTREPRENEURSHIP PARK SERVICE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to solve the above-mentioned deficiencies and defects, the present invention uses the core-shell structure of perovskite-wrapped quantum dots as the light-absorbing layer of perovskite solar cells, which overcomes the many defects in the contact area between quantum dots and perovskite layers in the prior art, and the photoelectric Defects with low conversion efficiency increase the contact area between quantum dots and the perovskite structure layer, and take advantage of the advantage that perovskite can be used as a hole transport layer to improve the efficiency of light-hole separation, thereby improving the photoelectric conversion efficiency of the battery

Method used

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  • Perovskite-type solar cell and preparation method

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Embodiment 1

[0035] This embodiment includes the following steps:

[0036] (1) Preparation of TiO 2 dense electron transport layer

[0037] First, clean the clear FTO glass. The FTO glass with a size of 2.0×2.0cm was first cleaned with detergent to remove surface oil and particulate pollutants, then ultrasonically cleaned with deionized water, acetone and alcohol for 15 minutes, and then dried with nitrogen to remove residual organic matter on the surface of the FTO glass .

[0038] Then TiO was prepared by radio frequency magnetron sputtering (RF) 2Dense electron transport layer, the FTO glass substrate is placed in the sputtering chamber, and the pressure of the sputtering chamber is pumped to 2.5×10 -4 Pa, the argon gas with a purity of 99.9% was introduced, and after gas washing twice, the sputtering pressure was controlled at 0.1Pa, and the sputtering power was 100W. Dense TiO obtained on FTO 2 electron transport layer.

[0039] (2) Preparation of composite light-absorbing laye...

Embodiment 2

[0048] This embodiment includes the following steps:

[0049] (1) Preparation of TiO 2 dense electron transport layer

[0050] First, clean the transparent ITO glass. The ITO glass with a size of 3.0×3.0cm was first cleaned with detergent to remove surface oil and particulate pollutants, then ultrasonically cleaned with deionized water, acetone and alcohol for 15 minutes, and then dried with nitrogen to remove residual organic matter on the surface of the ITO glass .

[0051] Then TiO was prepared by radio frequency magnetron sputtering (RF) 2 Dense electron transport layer, the ITO glass substrate is placed in the sputtering chamber, and the pressure of the sputtering chamber is pumped to 2.5×10 -4 Pa, the argon gas with a purity of 99.9% was introduced, and after gas washing twice, the sputtering pressure was controlled at 0.1Pa, and the sputtering power was 100W. Dense TiO obtained on ITO 2 electron transport layer.

[0052] (2) Preparation of composite light-absorbi...

Embodiment 3

[0061] This embodiment includes the following steps:

[0062] (1) Preparation of ZnO dense electron transport layer

[0063] First, clean the transparent ITO glass. The ITO glass with a size of 3.0×3.0cm was first cleaned with detergent to remove surface oil and particulate pollutants, then ultrasonically cleaned with deionized water, acetone and alcohol for 15 minutes, and then dried with nitrogen to remove residual organic matter on the surface of the ITO glass .

[0064] Then the ZnO dense electron transport layer was prepared by radio frequency magnetron sputtering (RF), the ITO glass substrate was placed in the sputtering chamber, and the pressure of the sputtering chamber was pumped to 2.5×10 -4 Pa, the argon gas with a purity of 99.9% was introduced, and after two washes, the sputtering pressure was controlled at 0.1Pa, and the sputtering power was 500W. A dense ZnO electron transport layer was obtained on ITO.

[0065] (2) Preparation of composite light-absorbing l...

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Abstract

The invention discloses a perovskite-type solar cell and a preparation method. The perovskite-type solar cell sequentially consists of a transparent conductive substrate, a dense electron transmission layer, a composite light absorption layer and a metal electrode layer, wherein the composite light absorption layer is formed by a core shell structure where perovskite wraps P-type semiconductor quantum dots. Because the composite light absorption layer of the solar cell employs the core shell structure where perovskite wraps P-type semiconductor quantum dots and the perovskite fully contacts with the quantum dots, the contact area of the quantum dots with a perovskite structural layer is increased. Moreover, the advantage that the perovskite can be used as a hole transmission layer is employed, thereby improving the efficiency of light hole separation, and improving the photoelectric conversion efficiency of the cell.

Description

technical field [0001] The invention relates to the field of photovoltaic materials, in particular to a perovskite solar cell and a preparation method. Background technique [0002] With fossil fuels decreasing day by day, solar energy has become an important part of the energy used by human beings and has been continuously developed. The continuous development and application of solar cells can directly and effectively convert solar energy into electrical energy for human use. [0003] Perovskite solar cells are named after perovskite as the absorbing layer. It is developed from dye-sensitized cells. As of 2013, the photoelectric conversion efficiency of perovskite thin-film solar cells has increased from 3.8% in 5 years. That quickly increased to a certified 16.2%. Perovskite materials play a very important role in batteries, and perovskite crystals are ABX 3 The structure is generally cubic or octahedral, and the crystal structure is stable. The band gap of perovskite ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/48
CPCH10K71/166H10K85/631Y02E10/549
Inventor 陈庆曾军堂叶任海陈兵
Owner HAIMEN THE YELLOW SEA ENTREPRENEURSHIP PARK SERVICE CO LTD
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