LED chip electrode, LED chip structure and fabrication methods of LED chip electrode and LED chip structure

Abstract

The invention discloses an LED chip electrode, an LED chip structure and fabrication methods of the LED chip electrode and the LED chip structure. The fabrication method of the LED chip electrode comprises the following steps: forming a negative photoresist on a substrate, defining an electrode pattern and removing the negative photoresist in a pattern region to form an electrode window; forming a reflecting structure on the electrode window; and forming a metal surface layer on the reflecting structure by an ion source-assisted plating method and finishing coating the top surface and the side walls of the reflecting structure. Therefore, the coating range of the reflecting structure is increased; the technological process is effectively simplified; the fabrication cost is saved; and the method is suitable for large-scale production. In further, the metal surface layer is formed by the ion source-assisted plating method to prepare an electrode structure which is compact, small in internal stress and smooth in surface. Therefore, the reliability of an LED is improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to an LED chip electrode and chip structure and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English for LightEmittingDiode, referred to as LED) is a semiconductor diode, it can convert electrical energy into light energy, emit yellow, green, blue and other colors of visible light and infrared and ultraviolet invisible light. Compared with small incandescent bulbs and neon lamps, it has the advantages of low operating voltage and current, high reliability, long life and convenient adjustment of luminous brightness. Since the gallium nitride (GaN)-based LED was successfully developed in the 1990s, with the continuous progress of research, its luminous brightness has also been continuously improved, and its application fields have become wider and wider. [0003] refer to figure 1 As shown, in the current conventional front-mount light-emit...

AI Technical Summary

Problems solved by technology

Light-emitting diodes with this structure tend to have abnormal light decay problems during package aging, especially in high-temperature and high-humidity environments, where metal reflective layers such as Al or Ag are unstable and are more likely to interact with elements such as Cl and O in the environment. Oxidation due to the reaction, resulting in a decrease in light efficiency, electrode bubbling, peeling and even electrode drop, which leads to the failure of the light-emitting diode

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